PDTC115TK ,PDTC115T series; NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = openGeneral descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package P ..
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PDTC123ET ,NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTC123EU ,PDTC123E series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmDISCRETE SEMICONDUCTORSDATA SHEETPDTC123E seriesNPN resistor-equipped transistors;R1 = 2.2 kΩ, R2 = ..
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PDTC123JEF ,NPN resistor-equipped transistor
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PDTC115TK
PDTC115T series; NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open
Product profile1.1 General descriptionNPN resistor-equipped transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTC115T series
NPN resistor-equipped transistors; R1= 100 kΩ, R2= open
Table 1: Product overviewPDTC115TE SOT416 SC-75 PDTA115TE
PDTC115TK SOT346 SC-59A PDTA115TK
PDTC115TM SOT883 SC-101 PDTA115TM
PDTC115TS[1] SOT54 (TO-92) SC-43A PDTA115TS
PDTC115TT SOT23 - PDTA115TT
PDTC115TU SOT323 SC-70 PDTA115TU Built-in bias resistor � Reduces component count Simplifies circuit design � Reduces pick and place costs General-purpose switching and
amplification Circuit drivers Inverter and interface circuits
Table 2: Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 70 100 130 kΩ
Philips Semiconductors PDTC115T series Pinning information
Table 3: Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT323, SOT346, SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
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001aab348
006aaa218
001aab447
006aaa218
006aaa144
sym012
Transparent
top view
sym012
Philips Semiconductors PDTC115T series Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4: Ordering informationPDTC115TE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC115TK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC115TM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTC115TS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTC115TT - plastic surface mounted package; 3 leads SOT23
PDTC115TU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5: Marking codesPDTC115TE 17
PDTC115TK 28
PDTC115TM G5
PDTC115TS TC115T
PDTC115TT *AK
PDTC115TU *17
Philips Semiconductors PDTC115T series Limiting values[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Thermal characteristics[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation
SOT416 Tamb≤25°C [1]- 150 mW
SOT346 Tamb≤25°C [1]- 250 mW
SOT883 Tamb≤25°C [2][3]- 250 mW
SOT54 Tamb≤25°C [1]- 500 mW
SOT23 Tamb≤25°C [1]- 250 mW
SOT323 Tamb≤25°C [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7: Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
Philips Semiconductors PDTC115T series Characteristics
Table 8: CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB=0A --1 μA
VCE =30V; IB =0A;= 150°C
--50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =5V; IC=1 mA 100 - -
VCEsat collector-emitter
saturation voltage=5 mA; IB= 0.25 mA - - 150 mV bias resistor 1 (input) 70 100 130 kΩ collector capacitance IE =ie = 0 A; VCB =10V;
f=1MHz - 2.5 pF
Philips Semiconductors PDTC115T series Package outline
