PDTC115EEF ,NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kWFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTC115EK ,NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kWFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTC115EK ,NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kWDISCRETE SEMICONDUCTORSDATA SHEETPDTC115E seriesNPN resistor-equipped transistors;R1 = 100 kΩ, R2 = ..
PDTC115EU ,NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTC115TK ,PDTC115T series; NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = openGeneral descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package P ..
PDTC123EK ,PDTC123E series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
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PDTC115EEF-PDTC115EK
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 100 kΩ , R2 = 100 kΩ PDTC115E series
FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs.
APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver.
QUICK REFERENCE DATA
DESCRIPTIONNPN resistor equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
Note*= p: Made in Hong Kong.= t: Made in Malaysia.= W: Made in China.
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ PDTC115E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ PDTC115E series
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Refer to standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ PDTC115E series
THERMAL CHARACTERISTICS
Notes Refer to standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ PDTC115E series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads SOT416
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ PDTC115E series
Plastic surface mounted package; 3 leads SOT346
