PDTC114YU ,NPN resistor-equipped transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PDTC114YU ,NPN resistor-equipped transistorFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
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PDTC114YT-PDTC114YU
NPN resistor-equipped transistors; R1 = 10 k惟, R2 = 47 k惟
1. Product profile
1.1 General descriptionNPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTC114Y series
NPN resistor-equipped transistors;
R1 = 10 k, R2 = 47 k
Rev. 7 — 18 November 2011 Product data sheet
Table 1. Product overviewPDTC114YE SOT416 SC-75 - PDTA114YE ultra small
PDTC114YM SOT883 SC-101 - PDTA114YM leadless ultra small
PDTC114YT SOT23 - TO-236AB PDTA114YT small
PDTC114YU SOT323 SC-70 - PDTA114YU very small 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified Digital applications in automotive and
industrial segments Cost-saving alternative for BC847/857
series in digital applications Control of IC inputs Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 3.7 4.7 5.7
NXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code
Table 3. Pinning
SOT23; SOT323; SOT416
SOT883
Table 4. Ordering informationPDTC114YE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTC114YM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
SOT883
PDTC114YT - plastic surface-mounted package; 3 leads SOT23
PDTC114YU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codesPDTC114YE 33
PDTC114YM DU
PDTC114YT *27
PDTC114YU *30
NXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 6 V input voltage
positive - +40 V
negative - 6V output current - 100 mA
ICM peak collector current single pulse; 1ms
-100 mA
Ptot total power dissipation Tamb25C
PDTC114YE (SOT416) [1][2] -150 mW
PDTC114YM (SOT883) [2][3] -250 mW
PDTC114YT (SOT23) [1] -250 mW
PDTC114YU (SOT323) [1] -200 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from junction
to ambient
in free air
PDTC114YE (SOT416) [1][2] -- 830 K/W
PDTC114YM (SOT883) [2][3] -- 500 K/W
PDTC114YT (SOT23) [1] -- 500 K/W
PDTC114YU (SOT323) [1] -- 625 K/W
NXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kNXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
NXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
7. Characteristics[1] Characteristics of built-in transistor
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 A
VCE =30V; IB =0A; = 150C 5 A
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 150 A
hFE DC current gain VCE =5V; IC=5 mA 100 - -
VCEsat collector-emitter
saturation voltage =5mA; IB =0.25mA - - 100 mV
VI(off) off-state input voltage VCE =5V; IC =100 A- 0.7 0.5 V
VI(on) on-state input voltage VCE= 0.3 V; IC =1mA 1.4 0.8 - V bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 3.7 4.7 5.7 collector capacitance VCB =10V; IE =ie =0A; 1MHz 2.5 pF transition frequency VCE =5V; IC =10 mA; = 100 MHz
[1] -230 -MHz
NXP Semiconductors PDTC114Y series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
