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PDTC114TT ,NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
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PDTC114EU
NPN resistor-equipped transistor
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
FEATURES Built-in bias resistors R1 and R2
(typ.10 kΩ each) Simplification of circuit design Reduces number of components
and board space.
APPLICATIONS Especially suitable for space
reduction in interface and driver
circuits Inverter circuit configurations
without use of external resistors.
DESCRIPTIONNPN resistor-equipped transistor in a
SOT323 plastic package.
PNP complement: PDTA114EU.
PINNING
MARKING
Note∗=-: Made in Hong Kong.=t: Made in Malaysia.
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EU
DEFINITIONS
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
