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PDTC114EE
NPN resistor-equipped transistor
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
FEATURES Built-in bias resistors R1 and R2 (typ.10 kΩ each) Simplification of circuit design Reduces number of components and board space.
APPLICATIONS Especially suitable for space reduction in interface and
driver circuits Inverter circuit configurations without use of external
resistors.
DESCRIPTIONNPN resistor-equipped transistor in an SC-75 plastic
package. PNP complement: PDTA114EE.
MARKING
PINNING
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Transistor mounted on an FR4 printed-circuit board.
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
THERMAL CHARACTERISTICS
Note Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT416
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114EE
DEFINITIONS
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.