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PDTB123YK
PNP 500 mA, 50 V resistor-equipped transistors
Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTB123Y series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 10 kΩ
Table 1: Product overviewPDTB123YK SOT346 SC-59A TO-236 PDTD123YK
PDTB123YS[1] SOT54 SC-43A TO-92 PDTD123YS
PDTB123YT SOT23 - TO-236AB PDTD123YT Built-in bias resistors � Reduces component count Simplifies circuit design � Reduces pick and place costs 500 mA output current capability � ±10 % resistor ratio tolerance Digital application in automotive and
industrial segments Cost-saving alternativefor BC807 series
in digital applications Controlling IC inputs � Switching loads
Table 2: Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −500 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5
Philips Semiconductors PDTB123Y series Pinning information
Table 3: Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT346 input (base) GND (emitter) output (collector)
001aab347
006aaa148
001aab348
006aaa148
001aab447
006aaa148
006aaa144
sym003
Philips Semiconductors PDTB123Y series Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 4: Ordering informationPDTB123YK SC-59A plastic surface mounted package; 3 leads SOT346
PDTB123YS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTB123YT - plastic surface mounted package; 3 leads SOT23
Table 5: Marking codesPDTB123YK E8
PDTB123YS B123YS
PDTB123YT *7Y
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V input voltage
positive - +5 V
negative - −12 V output current (DC) - −500 mA
Ptot total power dissipation Tamb≤25°C
SOT346 [1]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Philips Semiconductors PDTB123Y series Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics
Table 7: Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1]
SOT346 - - 500 K/W
SOT54 - - 250 K/W
SOT23 - - 500 K/W
Table 8: CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-basecut-off
current
VCB= −40 V; IE =0A - - −100 nA
VCB= −50 V; IE =0A - - −100 nA
ICEO collector-emitter
cut-off current
VCE= −50 V; IB =0A - - −0.5 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −0.65 mA
hFE DC current gain VCE=−5 V; IC= −50 mA 70 - -
VCEsat collector-emitter
saturation voltage= −50 mA;= −2.5 mA −0.3 mV
VI(off) off-state input
voltage
VCE=−5 V; IC= −100μA −0.4 −0.6 −1.0 V
VI(on) on-state input
voltage
VCE= −0.3 V;= −20 mA
−0.5 −1.0 −1.4 V bias resistor1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5 collector capacitance VCB= −10V;IE =ie =0A;= 100 MHz
-11 - pF
Philips Semiconductors PDTB123Y series
Philips Semiconductors PDTB123Y series Package outline
