PDTA143ZE ,PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟FEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTA143ZE ,PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟Features and benefits 100 mA output current capability Reduces component count Built-in bias re ..
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PDTA143ZE-PDTA143ZU
PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟
1. Product profile
1.1 General descriptionPNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic
packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDT A143Z series
PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 47 k
Rev. 7 — 5 December 2011 Product data sheet
Table 1. Product overviewPDTA143ZE SOT416 SC-75 - PDTC143ZE ultra small
PDTA143ZM SOT883 SC-101 - PDTC143ZM leadless ultra small
PDTA143ZT SOT23 - TO-236AB PDTC143ZT small
PDTA143ZU SOT323 SC-70 - PDTC143ZU very small 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified Digital applications in automotive and
industrial segments Cost-saving alternative for BC847/857
series in digital applications Control of IC inputs Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 8 10 12
NXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code
Table 3. Pinning
SOT23; SOT323; SOT416
SOT883
Table 4. Ordering informationPDTA143ZE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA143ZM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
SOT883
PDTA143ZT - plastic surface-mounted package; 3 leads SOT23
PDTA143ZU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codesPDTA143ZE 37
PDTA143ZM DP
PDTA143ZT *19
PDTA143ZU *47
NXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5V input voltage
positive - +5 V
negative - 30 V output current - 100 mA
ICM peak collector current single pulse; 1ms 100 mA
Ptot total power dissipation Tamb25C
PDTA143ZE (SOT416) [1][2] -150 mW
PDTA143ZM (SOT883) [2][3] -250 mW
PDTA143ZT (SOT23) [1] -250 mW
PDTA143ZU (SOT323) [1] -200 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from junction
to ambient
in free air
PDTA143ZE (SOT416) [1][2] --830 K/W
PDTA143ZM (SOT883) [2][3] --500 K/W
PDTA143ZT (SOT23) [1] --500 K/W
PDTA143ZU (SOT323) [1] --625 K/W
NXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kNXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
NXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
7. Characteristics[1] Characteristics of built-in transistor
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= 50 V; IE =0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE= 30 V; IB =0A - - 1 A
VCE= 30 V; IB =0A; = 150C 5 A
IEBO emitter-base cut-off
current
VEB= 5V; IC =0A - - 170 A
hFE DC current gain VCE= 5V; IC= 10 mA 100 - -
VCEsat collector-emitter
saturation voltage= 5mA; IB= 0.25 mA - - 100 mV
VI(off) off-state input voltage VCE= 5V; IC= 100 A- 0.6 0.5 V
VI(on) on-state input voltage VCE= 0.3 V; IC= 5mA 1.3 0.9 - V bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 8 10 12 collector capacitance VCB= 10 V; IE =ie =0A; 1MHz 3 pF transition frequency VCE= 5V; IC= 10 mA; = 100 MHz
[1] -180 - MHz
NXP Semiconductors PDT A143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
