PDTA124XE ,PNP resistor-equipped transistorPDTA124X seriesPNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩRev. 08 — 3 September 2009 ..
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PDTA124XU ,PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhmFeaturesn Built-in bias resistors n Reduces component countn Simplifies circuit design n Reduces pic ..
PDTA124XU ,PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
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PDTA124XE-PDTA124XU
PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm
Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section2)
1.2 Features
1.3 Applications
1.4 Quick reference data
PDT A124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
Rev. 08 — 3 September 2009 Product data sheet
Table 1. Product overviewPDTA124XE SOT416 SC-75 - PDTC124XE
PDTA124XEF SOT490 SC-89 - PDTC124XEF
PDTA124XK SOT346 SC-59A TO-236 PDTC124XK
PDTA124XM SOT883 SC-101 - PDTC124XM
PDTA124XS[1] SOT54 SC-43A TO-92 PDTC124XS
PDTA124XT SOT23 - TO-236AB PDTC124XT
PDTA124XU SOT323 SC-70 - PDTC124XU Built-in bias resistors n Reduces component count Simplifies circuit design n Reduces pick and place costs 100 mA output current capability Digital applications n Cost-saving alternativefor BC857 series
in digital applications Controlling IC inputs n Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
NXP Semiconductors PDT A124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Pinning information
Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23; SOT323; SOT346; SOT416; SOT490 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
001aab347
006aaa148
001aab348
006aaa148
001aab447
006aaa148
006aaa144
sym003
Transparent
top view
sym003
NXP Semiconductors PDT A124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9)
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering informationPDTA124XE SC-75 plastic surface mounted package; 3 leads SOT416
PDTA124XEF SC-89 plastic surface mounted package; 3 leads SOT490
PDTA124XK SC-59A plastic surface mounted package; 3 leads SOT346
PDTA124XM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTA124XS[1] SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
PDTA124XT - plastic surface mounted package; 3 leads SOT23
PDTA124XU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codesPDTA124XE 31
PDTA124XEF 31
PDTA124XK 44
PDTA124XM DK
PDTA124XS TA124X
PDTA124XT *47
PDTA124XU *44
NXP Semiconductors PDT A124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −7V input voltage
positive - +7 V
negative - −40 V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT416 [1]- 150 mW
SOT490 [1][2]- 250 mW
SOT346 [1]- 250 mW
SOT883 [2][3]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
SOT323 [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
NXP Semiconductors PDT A124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Characteristics
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT490 [1][2]- - 500 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified
ICBO collector-base cut-off
current
VCB= −50 V; IE =0A - - −100 nA
ICEO collector-emitter cut-off
current
VCE= −30 V; IB =0A - - −1 μA
VCE= −30 V; IB =0A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −120 μA
hFE DC current gain VCE=−5 V; IC= −5mA 80 - -
VCEsat collector-emitter
saturation voltage= −10 mA;= −0.5 mA −150 mV
VI(off) off-state input voltage VCE=−5 V; IC= −100 μA- −0.8 −0.5 V
VI(on) on-state input voltage VCE= −0.3 V; IC= −2mA −2 −1.1 - V bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6 collector capacitance VCB= −10V;IE =ie =0A;
f=1MHz
--3 pF
NXP Semiconductors PDT A124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
