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PDTA115TU
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
Product profile1.1 General descriptionPNP resistor-equipped transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section2)
1.2 Features
1.3 Applications
1.4 Quick reference data
PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Rev. 05 — 2 September 2009 Product data sheet
Table 1. Product overviewPDTA115TE SOT416 SC-75 PDTC115TE
PDTA115TK SOT346 SC-59 PDTC115TK
PDTA115TM SOT883 SC-101 PDTC115TM
PDTA115TS[1] SOT54 (TO-92) SC-43A PDTC115TS
PDTA115TT SOT23 - PDTC115TT
PDTA115TU SOT323 SC-70 PDTC115TU Built-in bias resistors n Reduces component count Simplifies circuit design n Reduces pick and place costs General purpose switching and
amplification Circuit drivers Inverter and interface circuits
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 70 100 130 kΩ
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open Pinning information
Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT323, SOT346, SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
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NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering informationPDTA115TE SC-75 plastic surface mounted package; 3 leads SOT416
PDTA115TK SC-59 plastic surface mounted package; 3 leads SOT346
PDTA115TM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTA115TS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTA115TT - plastic surface mounted package; 3 leads SOT23
PDTA115TU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codesPDTA115TE 12
PDTA115TK 11
PDTA115TM E8
PDTA115TS TA115T
PDTA115TT *AC
PDTA115TU *11
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open Limiting values[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Thermal characteristics[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT416 [1]- 150 mW
SOT346 [1]- 250 mW
SOT883 [2][3]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
SOT323 [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified
ICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −100 nA
hFE DC current gain VCE = −5 V; IC = −1 mA 100 - -
VCEsat collector-emitter
saturation voltage
IC = −5 mA; IB = −0.25 mA - - −150 mV bias resistor 1 (input) 70 100 130 kΩ collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--3 pF
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open Package outline
Fig 3. Package outline SOT416 (SC-75)
Plastic surface-mounted package; 3 leads SOT416
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Fig 4. Package outline SOT346 (SC-59/TO-236)
Plastic surface-mounted package; 3 leads SOT346
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
NXP Semiconductors PDT A115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Plastic single-ended leaded (through hole) package; 3 leads SOT54
