PBSS9110X ,100 V, 1 A PNP low VCEsat (BISS) transistorapplications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to- ..
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PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: PBSS8110X.
1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation
1.3 Applications Major application segments: Automotive 42 V powerT elecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC conversion
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 02 — 22 November 2009 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −100 V collector current (DC) - - −1A
ICM peak collector current single pulse; ≤ 1ms −3A
RCEsat collector-emitter saturation
resistance= −1A; = −100 mA
[1] -170 320 mΩ
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning1emitter collector
3base
Table 3. Ordering information
PBSS9110X SC-62 plastic surface mounted package; collector pad for good
heat transfer; 3 leads
SOT89
Table 4. Marking codesPBSS9110X *4C
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 6cm2 collector mounting pad.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −120 V
VCEO collector-emitter voltage open base - −100 V
VEBO emitter-base voltage open collector - −5V collector current (DC) - −1A
ICM peak collector current single pulse; ≤ 1ms −3A base current (DC) - −0.3 A
Ptot total power dissipation Tamb≤25°C [1] -0.55 W
[2] -1.4 W
[3] -2.0 W junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, AL2O3, standard footprint.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] --227 K/W
[2] --89 K/W
[3] --63 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--16 K/W
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −80 V; IE =0A - - −100 nA
VCB= −80 V; IE =0A; =150°C −50 μA
ICES collector-emitter cut-off
current
VCE= −80 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current
VEB= −4V; IC =0A - - −100 nA
hFE DC current gain VCE= −5V; IC=−1 mA 150 - -
VCE= −5V; IC= −250 mA 150 - -
VCE= −5V; IC= −0.5A [1] 150 - 450
VCE= −5V; IC= −1A [1] 125 - -
VCEsat collector-emitter
saturation voltage= −250 mA; = −25 mA −120 mV= −500 mA; = −50 mA −180 mV= −1A; IB= −100 mA [1] -- −320 mV
RCEsat collector-emitter
saturation resistance= −1A; IB= −100 mA [1] -170 320 mΩ
VBEsat base-emitter saturation
voltage= −1A; IB= −100 mA - - −1.1 V
VBEon base-emitter turn-on
voltage= −1A; VCE= −5V - - −1.0 V delay time VCC= −10 V; IC= −0.5A;
IBon= −0.025A;
IBoff =0.025A
-20 - ns rise time - 60 - ns
ton turn-on time - 80 - ns storage time - 290 - ns fall time - 120 - ns
toff turn-off time - 410 - ns transition frequency IC= −50 mA; VCE= −10V;
f=100MHz
100 - - MHz collector capacitance IE =ie =0A; VCB= −10V;
f=1MHz 17 pF
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
