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PBSS8110T
100 V, 1 A NPN low VCEsat (BISS) transistor
NXP Semiconductors Product data sheet
100 V , 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
FEATURES SOT23 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements.
APPLICATIONS Major application segments Automotive 42 V power Telecom infrastructure Industrial Power management DC/DC converters Supply line switching Battery charger LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps
and LEDs). Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTIONNPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
MARKING
Note ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
QUICK REFERENCE DATA
ORDERING INFORMATION
NXP Semiconductors Product data sheet
100 V , 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
100 V , 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
100 V , 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
NXP Semiconductors Product data sheet
100 V , 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
CHARACTERISTICSTj = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
