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PBSS5440D
40 V PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS4440D
1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation
1.3 Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film T ransistor (TFT) backlight inverter
1.4 Quick reference data[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp≤ 300μs;δ≤ 0.02.
PBSS5440D
40 V PNP low VCEsat (BISS) transistor
Table 1: Quick reference dataVCEO collector-emitter voltage open base - - −40 V collector current (DC) [1] -- −4A
ICM peak collector current t=1msor limitedby
Tj(max) −15 A
RCEsat collector-emitter saturation
resistance= −6A;= −600 mA
[2]- 5575mΩ
Philips Semiconductors PBSS5440D Pinning information Ordering information Marking Limiting values
Table 2: Pinning collector collector base emitter collector collector
Table 3: Ordering informationPBSS5440D SC-74 plastic surface mounted package; 6 leads SOT457
Table 4: Marking codesPBSS5440D 71
Table 5: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −5V collector current (DC) [1]- −4A
ICM peak collector current t=1 ms or limited
by Tj(max) −15 A base current (DC) - −0.8 A
IBM peak base current tp≤ 300 μs- −2A
Ptot total power dissipation Tamb ≤ 25°C [2]- 360 mW
[3]- 600 mW
[4]- 750 mW
[1]- 1.1 W
[2][5]- 2.5 W
Philips Semiconductors PBSS5440D[1] Device mounted on a ceramic PCB, AL2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Operated under pulsed conditions: Duty cycleδ≤ 10 % and pulse width tp≤ 10 ms.
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 5: Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors PBSS5440D Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, AL2O3, standard footprint.
[5] Operated under pulsed conditions: Duty cycleδ≤ 10 % and pulse width tp≤ 10 ms.
Table 6: Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 350 K/W
[2]- - 208 K/W
[3]- - 160 K/W
[4]- - 113 K/W
[1][5] --50 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--45 K/W
Philips Semiconductors PBSS5440D
Philips Semiconductors PBSS5440D
Philips Semiconductors PBSS5440D Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7: CharacteristicsTamb = 25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB = −30 V; IE = 0 A - - −0.1 μA
VCB = −30 V; IE = 0 A; Tj= 150 °C- - −50 μA
ICES collector-emitter
cut-off current
VCE = −30 V; VBE = 0 V - - −0.1 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −0.1 μA
hFE DC current gain VCE = −2 V; IC = −0.5 A 200 - -
VCE = −2 V; IC = −1 A [1] 200 - -
VCE = −2 V; IC = −2 A [1] 175 - -
VCE = −2 V; IC = −4 A [1] 80 - -
VCE = −2 V; IC = −6 A [1] 30 - -
VCEsat collector-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA - −46 −60 mV
IC = −1 A; IB = −50 mA - −70 −110 mV
IC = −2 A; IB = −200 mA - −120 −180 mV
IC = −4 A; IB = −400 mA [1]- −220 −300 mV
IC = −6 A; IB = −600 mA [1]- −320 −450 mV
RCEsat collector-emitter
saturation resistance
IC = −6 A; IB = −600 mA [1]- 5575mΩ
VBEsat base-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA - −0.8 −0.85 V
IC = −1 A; IB = −50 mA - −0.84 −0.9 V
IC = −1 A; IB = −100 mA [1]- −0.84 −1V
IC = −4 A; IB = −400 mA [1]- −1.0 −1.1 V
VBEon base-emitter turn-on
voltage
VCE = −2 V; IC = −2 A - −0.8 −1.0 V delay time VCC = −10 V; IC = −2 A;
IBon= −0.1 A; IBoff= 0.1A
-12 - ns rise time - 43 - ns
ton turn-on time - 55 - ns storage time - 240 - ns fall time - 80 - ns
toff turn-off time - 320 - ns transition frequency VCE = −10 V; IC = −0.1 A;= 100 MHz 110 - MHz collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
-50 - pF
Philips Semiconductors PBSS5440D
