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PBSS5350Z
50 V low VCEsat PNP transistor
Philips Semiconductors Product specification
50 V low V CEsat PNP transistor PBSS5350Z
FEATURES Low collector-emitter saturation voltage High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat generation Reduced PCB area requirements compared to DPAK.
APPLICATIONS Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO). Peripheral drivers Driverin low supply voltage applications, e.g. lamps,
LEDs Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTIONPNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
50 V low V CEsat PNP transistor PBSS5350Z
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector1 cm2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector6 cm2. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector1 cm. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector6 cm2. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
Philips Semiconductors Product specification
50 V low V CEsat PNP transistor PBSS5350Z
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification
50 V low V CEsat PNP transistor PBSS5350Z
Philips Semiconductors Product specification
50 V low V CEsat PNP transistor PBSS5350Z
