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PBSS5350T
50 V low VCEsat PNP transistor
Philips Semiconductors Product specification V low V CEsat PNP transistor PBSS5350T
FEATURES Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation.
APPLICATIONS Power management applications Low and medium power DC/DC convertors Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTIONPNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4350T.
MARKING
Note∗= p: Made in Hong Kong.= t: Made in Malaysia.= w: Made in China.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification V low V CEsat PNP transistor PBSS5350T
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤ 0.25. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤ 0.25.
Philips Semiconductors Product specification V low V CEsat PNP transistor PBSS5350T
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat PNP transistor PBSS5350T
Philips Semiconductors Product specification V low V CEsat PNP transistor PBSS5350T
