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PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications Dual low power switches (e.g. motors, fans) Automotive
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Rev. 01 — 3 April 2007 Product data sheet
Table 1. Product overviewPBSS5350SS SOT96-1 SO8 PBSS4350SPN PBSS4350SS
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - −50 V collector current - - −2.7 A
ICM peak collector current single pulse;≤ 1ms −5A
RCEsat collector-emitter
saturation resistance= −2A;= −200 mA
[1]- 95 140 mΩ
NXP Semiconductors PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Pinning information Ordering information Marking Limiting values
Table 3. Pinning emitter TR1 base TR1 emitter TR2 base TR2 collector TR2 collector TR2 collector TR1 collector TR1
006aaa976
Table 4. Ordering information
PBSS5350SS SO8 plastic small outline package; 8 leads; body width
3.9 mm
SOT96-1
Table 5. Marking codesPBSS5350SS 5350SS
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V collector current - −2.7 A
ICM peak collector current single pulse;≤ 1ms −5A base current - −0.5 A
Ptot total power dissipation Tamb≤25°C [1]- 0.55 W
[2]- 0.87 W
[3]- 1.43 W
NXP Semiconductors PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Per devicePtot total power dissipation Tamb≤25°C [1]- 0.75 W
[2]- 1.2 W
[3] -2 W junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 227 K/W
[2]- - 144 K/W
[3] --87 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--40 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 167 K/W
[2]- - 104 K/W
[3] --63 K/W
NXP Semiconductors PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per transistorICBO collector-basecut-off
current
VCB= −50 V; IE =0A - - −100 nA
VCB= −50 V; IE =0A;= 150°C −50 μA
ICES collector-emitter
cut-off current
VCE= −50 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−2 V; IC= −100 mA 200 340 -
VCE=−2 V; IC= −500 mA [1] 200 290 -
VCE=−2 V; IC= −1A [1] 180 250 -
VCE=−2 V; IC= −2A [1] 130 180 -
VCE=−2 V; IC= −2.7A [1] 95 135 -
VCEsat collector-emitter
saturation voltage
[1]= −0.5 A; IB= −50 mA - −60 −90 mV=−1 A; IB= −50 mA - −125 −180 mV=−2 A; IB= −100 mA - −225 −320 mV=−2 A; IB= −200 mA - −190 −280 mV= −2.7 A; IB= −270 mA - −255 −370 mV
RCEsat collector-emitter
saturation resistance=−2 A; IB= −200 mA [1]- 95 140 mΩ
VBEsat base-emitter
saturation voltage
[1]=−2 A; IB= −100 mA - −0.95 −1.1 V= −2.7 A; IB= −270 mA - −1 −1.2 V
VBEon base-emitter turn-on
voltage
VCE=−2 V; IC= −1A [1]- −0.8 −1.2 V delay time VCC= −10 V; IC= −2A;
IBon= −100 mA;
IBoff= 100 mA -ns rise time - 54 - ns
ton turn-on time - 63 - ns storage time - 190 - ns fall time - 50 - ns
toff turn-off time - 240 - ns collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz 2535pF
NXP Semiconductors PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
