PBSS5320D ,20 V low VCEsat PNP transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS5330X ,PBSS5330X; 30 V, 3 A PNP low VCEsat (BISS) transistorapplications(e.g. lamps and LEDs)– Inductive load driver (e.g. relays, buzzers2and motors).3DESCRIP ..
PBSS5350D ,50 V, 3 A PNP low VCEsat (BISS) transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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PBSS5350T ,50 V low VCEsat PNP transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
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PDI1394L40 ,1394 enhanced AV link layer controller
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PBSS5320D
20 V low VCEsat PNP transistor
NXP Semiconductors Product data sheet
20 V low V CEsat PNP transistor PBSS5320D
FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat
generation
APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTIONPNP low VCEsat transistor in a SOT457 (SC-74) plastic
package.
MARKING
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product data sheet
20 V low V CEsat PNP transistor PBSS5320D
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
NXP Semiconductors Product data sheet
20 V low V CEsat PNP transistor PBSS5320D
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
20 V low V CEsat PNP transistor PBSS5320D
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
20 V low V CEsat PNP transistor PBSS5320D
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
