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PBSS5250X
50 V, 2 A PNP low VCEsat (BISS) transistor
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5250X
FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements.
APPLICATIONS Power management DC/DC converters Supply line switching Battery charger LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps
and LEDs). Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTIONPNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4250X.
MARKING
Note * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
QUICK REFERENCE DATA
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5250X
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5250X
THERMAL CHARACTERISTICS
Notes Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. Device mounted on a ceramic printed-circuit board 7 cm2 , single-sided copper, tin-plated.
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5250X
NXP Semiconductors Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5250X
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
