PBSS5240V ,40 V low VCEsat PNP transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS5250X ,50 V, 2 A PNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA• SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT• Low collector-emitt ..
PBSS5320D ,20 V low VCEsat PNP transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS5330X ,PBSS5330X; 30 V, 3 A PNP low VCEsat (BISS) transistorapplications(e.g. lamps and LEDs)– Inductive load driver (e.g. relays, buzzers2and motors).3DESCRIP ..
PBSS5350D ,50 V, 3 A PNP low VCEsat (BISS) transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PBSS5350SS ,50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistorApplicationsn Dual low power switches (e.g. motors, fans)n Automotive1.4 Quick reference dataTable ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DL ,3.3 V parallel interface transceiver/bufferINTEGRATED CIRCUITSPDI1284P113.3V Parallel interface transceiver/bufferProduct specification 1999 S ..
PDI1394L40 ,1394 enhanced AV link layer controller
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PBSS5240V
40 V low VCEsat PNP transistor
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5240V
FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency leading to reduced heat generation Reduced printed-circuit board area requirements.
APPLICATIONS Power management: DC-DC converter Supply line switching Battery charger LCD back lighting. Peripheral driver: Driver in low supply voltage applications (e.g. lamps,
LEDs) Inductive load drivers (e.g. relay, buzzers and
motors).
DESCRIPTIONPNP transistor providing low VCEsat and high current
capability in a SOT666 plastic package.
NPN complement: PBSS4240V.
PINNING
MARKING
QUICK REFERENCE DATA
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5240V
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a ceramic circuit board, Al2O3, standard footprint. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. Device mounted on a ceramic circuit board, Al2O3, standard footprint. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
SolderingThe only recommended soldering method is reflow soldering.
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5240V
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5240V
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5240V
