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PBSS5160U
PBSS5160U; 60 V, 1 A PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat (BISS) transistor in a SOT323 (SC-70) plastic package.
NPN complement: PBSS4160U.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement of medium power transistors BCP52 and BCX52.
1.3 Applications Major application segments Automotive Telecom infrastructure Industrial Power management DC-to-DC conversion Supply line switching Peripheral driver Inductive load driver (e.g. relays, buzzers and motors) Driver in low supply voltage applications (e.g. lamps and LEDs).
1.4 Quick reference data
PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
Table 1: Quick reference dataVCEO collector-emitter voltage - - −60 V collector current (DC) - - −1A
ICM peak collector current - - −2A
RCEsat equivalent on-resistance - - 330 mΩ
Philips Semiconductors PBSS5160U Pinning information Ordering information Marking[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Table 2: Discrete pinning base emitter collector
sot323_so
sym013
Table 3: Ordering informationPBSS5160U SC-70 plastic surface mounted package; 3 leads SOT323
Table 4: MarkingPBSS5160U 53*
Philips Semiconductors PBSS5160U Limiting values[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for
collector1 cm2.
Table 5: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −80 V
VCEO collector-emitter
voltage
open base - −60 V
VEBO emitter-base voltage open collector - −5V collector current (DC) [1]- −0.8 A
[2]- −1A
ICM peak collector current t = 1 ms or limited by
Tj(max) −2A base current (DC) - −300 mA
IBM peak base current tp ≤ 300 μs; δ≤ 0.02 - −1A
Ptot total power dissipation Tamb ≤ 25°C [1]- 250 mW
[2]- 350 mW junction temperature - 150 °C
Tamb operating ambient
temperature
−65 +150 °C
Tstg storage temperature −65 +150 °C
Philips Semiconductors PBSS5160U Thermal characteristics[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector1 cm2.
Table 6: Thermal characteristicsRth(j-a) thermal resistance from junctionto ambient in free air [1] 500 K/W
[2] 357 K/W
Philips Semiconductors PBSS5160U Characteristics[1] Pulse test: tp ≤ 300μs; δ≤ 0.02.
Table 7: CharacteristicsTamb = 25 °C unless otherwise specified.
ICBO collector-base cut-off current VCB = −60 V; IE = 0 A - - −100 nA
VCB = −60 V; IE = 0 A; Tj= 150 °C- - −50 μA
ICES collector-emitter cut-off
current
VCE = −60 V; VBE = 0 V - - −100 nA
IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA
hFE DC current gain VCE = −5 V; IC = −1 mA 200 350 -
VCE = −5 V; IC = −500 mA [1] 150 250 -
VCE = −5 V; IC = −1 A [1] 100 160 -
VCEsat collector-emitter saturation
voltage
IC = −100 mA; IB = −1 mA - −110 −160 mV
IC = −500 mA; IB = −50 mA - −130 −175 mV
IC = −1 A; IB = −100 mA [1]- −250 −330 mV
VBEsat base-emitter saturation
voltage
IC = −1 A; IB = −50 mA - −0.95 −1.1 V
RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA [1]- 250 330 mΩ
VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A - −0.82 −0.9 V transition frequency IC = −50 mA; VCE = −10 V; f= 100 MHz 150 220 - MHz collector capacitance VCB = −10 V; IE = Ie = 0 A; f= 1 MHz - 9 15 pF
Philips Semiconductors PBSS5160U
