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PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4140T.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation
1.3 Applications General-purpose switching and muting LCD backlighting Supply line switching circuits Battery-driven equipment (mobile phones, video cameras and handheld devices)
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
Rev. 04 — 29 July 2008 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −40 V collector current - - −1A
ICM peak collector current single pulse;≤ 1ms −2A
RCEsat collector-emitter
saturation resistance= −500 mA;= −50 mA
[1]- 300 < 500 mΩ
NXP Semiconductors PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values
Table 2. Pinning base emitter collector
006aab259
Table 3. Ordering informationPBSS5140T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPBSS5140T *2H
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −5V collector current - −1A
ICM peak collector current single pulse;≤ 1ms −2A
IBM peak base current single pulse;≤ 1ms −1A
NXP Semiconductors PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Ptot total power dissipation Tamb≤25°C
[1]- 300 mW
[2]- 450 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
[1]- - 417 K/W
[2]- - 278 K/W
NXP Semiconductors PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
NXP Semiconductors PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −40 V; IE =0A - - −100 nA
VCB= −40 V; IE =0A;= 150°C −50 μA
ICEO collector-emitter
cut-off current
VCE= −30 V; IB =0A - - −100 nA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−5 V; IC=−1 mA 300 - -
VCE=−5 V; IC= −100 mA 300 - 800
VCE=−5 V; IC= −500 mA [1] 250 - -
VCE=−5 V; IC= −1A [1] 160 - -
VCEsat collector-emitter
saturation voltage= −100 mA; IB= −1mA - - −200 mV= −500 mA; IB= −50 mA [1] -- −250 mV=−1 A; IB= −100 mA [1] -- −500 mV
RCEsat collector-emitter
saturation resistance= −500 mA; IB= −50 mA [1]- 300 < 500 mΩ
VBEsat base-emitter
saturation voltage=−1 A; IB= −50 mA [1] -- −1.1 V
VBEon base-emitter turn-on
voltage
VCE=−5 V; IC= −1A - - −1V delay time VCC= −10 V; IC= −0.5A;
IBon= −25 mA;
IBoff =25mA
-10 - ns rise time - 31 - ns
ton turn-on time - 41 - ns storage time - 195 - ns fall time - 65 - ns
toff turn-off time - 260 - ns transition frequency VCE= −10 V; IC= −50 mA;= 100 MHz
150 - - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz
--12 pF
NXP Semiconductors PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
NXP Semiconductors PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
