PBSS5130T Fast Delivery |IC PHOENIX CO.,LIMITED

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PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
SOT23 PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor9 July 2013 Product data sheet General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23
Surface-Mounted Device (SMD) plastic package. Features and benefits Small SMD plastic package• Low collector-emitter saturation voltage VCEsat• High collector current capability: IC and ICM• Higher efficiency due to less heat generation• AEC-Q101 qualified Applications DC-to-DC conversion• Supply line switching• Battery charger• LCD backlighting• Driver in low supply voltage applications (e.g. lamps and LEDs) Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter
voltage
open base - - -30 V collector current - - -1 A
ICM peak collector current single pulse; tp ≤ 1 ms - - -3 A
RCEsat collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 220 mΩ
NXP Semiconductors PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol B base E emitter C collector 1 2
TO-236AB (SOT23) sym132E Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS5130T TO-236AB plastic surface-mounted package; 3 leads SOT23 Marking
Table 4. Marking codes
Type number Marking code
[1]
PBSS5130T %3E
[1] % = placeholder for manufacturing site code
NXP Semiconductors PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -30 V
VCEO collector-emitter voltage open base - -30 V
VEBO emitter-base voltage open collector - -5 V collector current - -1 A
ICM peak collector current - -3 A
IBM peak base current
single pulse; tp ≤ 1 ms -300 mA
[1] - 300 mWPtot total power dissipation Tamb ≤ 25 °C
[2] - 480 mW junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 417 K/WRth(j-a) thermal resistance
from junction toambient
in free air
[2] - - 260 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
NXP Semiconductors PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-off
current VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA
IEBO emitter-base cut-off
current
VEB = -4 V; IC = 0 A; Tamb = 25 °C - - -100 nA
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
300 450 -
VCE = -2 V; IC = -500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
260 350 -
hFE DC current gain
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
210 290 -
IC = -100 mA; IB = -1 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -100 mVVCEsat collector-emittersaturation voltage
IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -225 mV
RCEsat collector-emitter saturation resistance IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 220 mΩ
VBEsat base-emitter saturation
voltage
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -1.1 V
VBEon base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -0.75 V transition frequency VCE = -10 V; IC = -100 mA;
f = 100 MHz; Tamb = 25 °C
100 200 - MHz collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C - 28 pF
NXP Semiconductors PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
aaa-006394
hFE
IC (mA)-10-1 -104-103-1 -102-10
(1)
(2)
(3)
VCE = -2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 1. DC current gain as a function of collector
current; typical values
VCE (V)0 -5-4-2 -3-1
aaa-006395
-1.0(A)
IB (mA) =-3
Tamb = 25 °C
Fig. 2. Collector current as a function of collector-emitter voltage; typical values
aaa-006396
VBE(mV)
(1)
(2)
(3)
aaa-006397
VBEsat(mV)
IC (mA)-10-1 -104-103-1 -102-10
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
aaa-006398
VCEsat(mV)
IC (mA)-10-1 -104-103-1 -102-10
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 5. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-006406
IC (mA)-10-1 -104-103-1 -102-10
RCEsat(Ω)
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 6. Collector-emitter saturation resistance as a
function of collector current; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.
12. Package outline

Partno	Mfg	Dc	Qty	Available	Descript
PBSS5130T	NXP	N/a	1000	avai	30 V; 1 A PNP low VCEsat (BISS) transistor