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PBSS4580PA
80 V, 5.6 A NPN low V_CEsat (BISS) transistor
1. Product profile
1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5580PA.
1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability
1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PBSS4580P A
80 V, 5.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 15 April 2010 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - 80 V collector current - - 5.6 A
ICM peak collector current single pulse; ≤ 1ms 7 A
RCEsat collector-emitter
saturation resistance =5.6A; =280 mA
[1] -40 57 mΩ
NXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning1base
2emitter collector
Table 3. Ordering informationPBSS4580PA HUSON3 plastic thermal enhanced ultra thin small outline package;
no leads; three terminals; body2×2× 0.65 mm
SOT1061
Table 4. Marking codesPBSS4580PA AD
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 80 V
VEBO emitter-base voltage open collector - 6 V collector current - 5.6 A
ICM peak collector current single pulse; ≤ 1ms A base current - 600 mA
Ptot total power dissipation Tamb≤25°C [1] -500 mW
[2] -1 W
[3] -1.4 W
[4] -2.1 W
NXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint. junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 250 K/W
[2] -- 125 K/W
[3] -- 90 K/W
[4] -- 60 K/W
NXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistorNXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
NXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
7. Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base
cut-off current
VCB =64V; IE=0A - - 100 nA
VCB =64V; IE =0A; = 150°C
--50 μA
ICES collector-emitter
cut-off current
VCE =64V; VBE=0V - - 100 nA
IEBO emitter-base
cut-off current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =2V [1]= 0.5A 270 425 -=1A 240 375 -=2A 150 245 - =6A 45 75 -
VCEsat collector-emitter
saturation voltage =0.5 A; IB =50mA [1]- 2535mV =1A; IB =50mA [1]- 5070mV =1A; IB =10mA [1]- 85 120 mV =2A; IB =20mA [1]- 150 220 mV =3A; IB =30mA [1]- 265 360 mV =4A; IB= 400 mA [1]- 155 210 mV =5.6 A; IB= 280 mA [1]- 230 320 mV
RCEsat collector-emitter
saturation resistance =5.6 A; IB= 280 mA [1]- 4057mΩ
VBEsat base-emitter
saturation voltage =1A; IB =10mA [1]- 0.74 0.9 V =5.6 A; IB= 280 mA [1] -1 1.1 V
VBEon base-emitter
turn-on voltage
VCE =2V; IC =2A [1]- 0.76 0.9 V delay time VCC =9V; IC =2A;
IBon =0.1A;
IBoff= −0.1A
-21 - ns rise time - 162 - ns
ton turn-on time - 183 - ns storage time - 720 - ns fall time - 205 - ns
toff turn-off time - 925 - ns transition frequency VCE =10V; =100 mA;
f=100MHz 155 - MHz collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 2025pF
NXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
NXP Semiconductors PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
