PBSS4540Z ,40 V low VCEsat NPN transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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PBSS4540Z
40 V low VCEsat NPN transistor
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4540Z
FEATURES Low collector-emitter saturation voltage High current capabilities Improved device reliability due to reduced heat
generation.
APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavyduty battery poweredequipment(motorand lamp
drivers) MOSFET driver applications.
DESCRIPTIONNPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5540Z.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4540Z
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4540Z
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4540Z
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4540Z