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PBSS4350Z
50 V low VCEsat NPN transistor
NXP Semiconductors Product data sheet
50 V low V CEsat NPN transistor PBSS4350Z
FEATURES Low collector-emitter saturation voltage High collector current capability: IC and ICM High collector current gain (hFE) at high IC Higher efficiency leading to less heat generation Reduced PCB area requirements compared to DPAK.
APPLICATIONS Power management DC/DC converters Supply line switching Battery charger Linear voltage regulation (LDO). Peripheral drivers Driver in low supply voltage applications, e.g. lamps,
LEDs Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTIONNPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5350Z.
MARKING
QUICK REFERENCE DATA
NXP Semiconductors Product data sheet
50 V low V CEsat NPN transistor PBSS4350Z
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
NXP Semiconductors Product data sheet
50 V low V CEsat NPN transistor PBSS4350Z
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
50 V low V CEsat NPN transistor PBSS4350Z
NXP Semiconductors Product data sheet
50 V low V CEsat NPN transistor PBSS4350Z
