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PBSS4350X
50 V, 3 A NPN low VCEsat (BISS) transistor
Philips Semiconductors Product specification
50 V , 3 A
NPN low V CEsat (BISS) transistor PBSS4350X
FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements.
APPLICATIONS Power management DC/DC converters Supply line switching Battery charger LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps
and LEDs). Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTIONNPN low VCEsat transistor in a SOT89 plastic package.
PNP complement: PBSS5350X.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
50 V , 3 A
NPN low V CEsat (BISS) transistor PBSS4350X
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector1 cm2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector6 cm2. Device mounted on a ceramic printed-circuit board 7 cm2 , single-sided copper, tin-plated.
Philips Semiconductors Product specification
50 V , 3 A
NPN low V CEsat (BISS) transistor PBSS4350X
Philips Semiconductors Product specification
50 V , 3 A
NPN low V CEsat (BISS) transistor PBSS4350X
THERMAL CHARACTERISTICS
Notes Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector1 cm2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector6 cm2. Device mounted on a ceramic printed-circuit board 7 cm2 , single-sided copper, tin-plated.
Philips Semiconductors Product specification
50 V , 3 A
NPN low V CEsat (BISS) transistor PBSS4350X
