PBSS4350D ,50 V low VCEsat NPN transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS4350S ,50 V low VCEsat NPN transistor
PBSS4350S ,50 V low VCEsat NPN transistor
PBSS4350SS ,50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PBSS4350SS ,50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistorApplicationsn Dual low power switches (e.g. motors, fans)n Automotive1.4 Quick reference dataTable ..
PBSS4350T ,50 V; 3 A NPN low VCEsat (BISS) transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
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PDI1394L40 ,1394 enhanced AV link layer controller
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PBSS4350D
50 V low VCEsat NPN transistor
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4350D
FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat
generation Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
APPLICATIONS Supply line switching circuits Battery management applications DC/DC convertor applications Strobe flash units Heavyduty battery poweredequipment(motorand lamp
drivers).
DESCRIPTIONNPN low VCEsat transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4350D
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4350D
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4350D
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4350D
