PBSS4230T ,30 V; 2 A NPN low VCEsat (BISS) transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS4240DPN ,PBSS4240DPN; 40 V low VCEsat NPN/PNP transistor
PBSS4240DPN ,PBSS4240DPN; 40 V low VCEsat NPN/PNP transistor
PBSS4240T ,40 V low VCEsat NPN transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS4240Y ,40 V low VCEsat NPN transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS4250X ,PBSS4250X; 50 V, 2 A NPN low VCEsat (BISS) transistor
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DL ,3.3 V parallel interface transceiver/bufferINTEGRATED CIRCUITSPDI1284P113.3V Parallel interface transceiver/bufferProduct specification 1999 S ..
PDI1394L40 ,1394 enhanced AV link layer controller
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PBSS4230T
30 V; 2 A NPN low VCEsat (BISS) transistor
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduced printed-circuit board requirements Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS Power management DC/DC conversion Supply line switching Battery charger LCD backlighting. Peripheral driver Driver in low supply voltage applications (e.g. lamps
and LEDs) Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTIONNPN BISS transistor in a SOT23 plastic package providing
ultra low VCEsat and RCEsat parameters.
PNP complement: PBSS5230T.
MARKING
Note * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
ORDERING INFORMATION
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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System of IEC 60134) may cause permanent damage to
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Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
