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PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionNPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required.
1.3 Applications Power management DC-to-DC conversion Supply line switching Peripheral driver Inductive load drivers (e.g. relays, buzzers and motors) Driver in low supply voltage applications (e.g. lamps and LEDs).
1.4 Quick reference data
PBSS4160DPN V, 1 A NPN/PNP low VCEsat (BISS) transistor
Table 1: Quick reference dataVCEO collector-emitter voltage - - 60 −60 V collector current (DC) - - 1 −1A
ICRP repetitive peak collector
current
--2 −1.5 A
RCEsat equivalent on-resistance - - 250 330 mΩ
Philips Semiconductors PBSS4160DPN Pinning information Ordering information Marking[1] Made in Malaysia.
Table 2: Discrete pinning1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
SOT457
sym0191 36
TR1
TR2
Table 3: Ordering informationPBSS4160DPN- plastic surface mounted package; 6 leads SOT457
Table 4: MarkingPBSS4160DPN B4
Philips Semiconductors PBSS4160DPN Limiting values[1] Device mounted on a ceramic circuit board, Al2O3, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for
collector1 cm2.
Thermal characteristics[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for
collector1 cm2.
[2] Device mounted on a ceramic circuit board, Al2O3, standard footprint.
Table 5: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor unless otherwise specified; for the PNP transistor with negative polarityVCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V collector current (DC) - 1 A
ICM peak collector current t=1 ms or
limited by
Tj(max) A
ICRP repetitive peak collector
current
NPN [1] -2 A
PNP [1]- 1.5 A base current (DC) - 300 mA
IBM peak base current tp≤ 300 μs; 0.02 A
Ptot total power dissipation Tamb≤25°C [2]- 310 mW
[3]- 370 mW
[1]- 1.1 W junction temperature - 150 °C
Tamb operating ambient
temperature
−65 +150 °C
Tstg storage temperature −65 +150 °C
Per devicePtot total power dissipation Tamb≤25°C [3]- 600 mW
Table 6: Thermal characteristics
Per transistorRth(j-a) thermal resistance from junction
to ambient
in free air [1] 340 K/W
[2] 110 K/W
Philips Semiconductors PBSS4160DPN Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7: Characteristics =25 °C unless otherwise specified.
Per transistor unless otherwise specified; for the PNP transistor with negative polarityICBO collector-base cut-off
current
VCB =60V; IE=0A - - 100 nA
VCB =60V; IE =0A;= 150°C
--50 μA
ICES collector-emitter
cut-off current
VCE =60V; VBE=0V - - 100 nA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
VBEsat base-emitter
saturation voltage=1 A; IB=50 mA - 0.95 1.1 V
VBEon base-emitter turn-on
voltage
VCE =5V; IC=1A - 0.82 0.9 V transition frequency IC=50 mA; VCE =10V;= 100 MHz
150 220 - MHz
TR1 (NPN)hFE DC current gain VCE =5V; IC=1 mA 250 400 -
VCE =5V; IC= 500 mA [1] 200 350 -
VCE =5V; IC =1A [1] 100 150 -
VCEsat collector-emitter
saturation voltage= 100 mA; IB=1 mA - 90 110 mV= 500 mA; IB=50 mA - 110 140 mV=1 A; IB= 100 mA [1] - 200 250 mV
RCEsat equivalent
on-resistance=1 A; IB= 100 mA [1] - 200 250 mΩ collector capacitance VCB =10V; IE =Ie =0A;
f=1MHz 5.5 10 pF
TR2 (PNP)hFE DC current gain VCE=−5 V; IC=−1 mA 200 350 -
VCE=−5 V; IC= −500 mA [1] 150 250 -
VCE=−5 V; IC= −1A [1] 100 160 -
VCEsat collector-emitter
saturation voltage= −100 mA; IB= −1mA - −110 −160 mV= −500 mA; IB= −50 mA - −120 −175 mV=−1 A; IB= −100 mA [1] - −220 −330 mV
RCEsat equivalent
on-resistance=−1 A; IB= −100 mA [1] - 220 330 mΩ collector capacitance VCB= −10 V; IE =Ie =0A;
f=1MHz 9 15 pF
Philips Semiconductors PBSS4160DPN
Philips Semiconductors PBSS4160DPN
Philips Semiconductors PBSS4160DPN
