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PBSS4140VPHILIPSN/a3202avai40 V low VCEsat NPN transistor


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PBSS4140V
40 V low VCEsat NPN transistor

Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140V
FEATURES
300 mW total power dissipation Very small 1.6 mmx 1.2 mm x 0.55 mm ultra thin
package Improved thermal behaviour due to flat leads Excellent coplanarity due to straight leads Low collector-emitter saturation voltage High current capabilities Reduced required PCB area.
APPLICATIONS
General purpose switching and muting LCD backlighting Supply line switching circuits Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION

NPN low VCEsat transistor with high current capability in a
SOT666 plastic package. PNP complement: PBSS5140V.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140V
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
Operated under pulsed conditions: tp≤30 ms; δ≤ 0.2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector1 cm2.
THERMAL CHARACTERISTICS
Notes
Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector1 cm2. Operated under pulsed conditions: tp≤30 ms; δ≤ 0.2.
Soldering

The only recommended soldering method is reflow soldering.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140V
CHARACTERISTICS

Tamb =25 °C unless otherwise specified.
Note
Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140V
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140V
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