PBSS4140T ,40 V low VCEsat NPN transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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PBSS4140T
40 V low VCEsat NPN transistor
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140T
FEATURES Low collector-emitter saturation voltage High current capabilities. Improved device reliability due to reduced heat
generation.
APPLICATIONS General purpose switching and muting LCD backlighting Supply line switching circuits Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTIONNPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5140T.
MARKING
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector1 cm2.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140T
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140T
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140T
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
