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PBSS4140T from PHI,Philips

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PBSS4140T

Manufacturer: PHI

40 V low VCEsat NPN transistor

Partnumber Manufacturer Quantity Availability
PBSS4140T PHI 10000 In Stock

Description and Introduction

40 V low VCEsat NPN transistor **Introduction to the PBSS4140T Transistor by Philips**  

The PBSS4140T is a high-performance NPN bipolar junction transistor (BJT) designed by Philips, now part of Nexperia, for general-purpose switching and amplification applications. This surface-mount device (SOT-23 package) offers a compact and efficient solution for low-power circuits, making it suitable for portable electronics, signal processing, and power management systems.  

With a collector current rating of 1 A and a collector-emitter voltage (VCE) of 40 V, the PBSS4140T provides reliable operation in various low-voltage environments. Its fast switching speed and low saturation voltage enhance energy efficiency, while the high current gain (hFE) ensures stable performance in amplification tasks.  

The transistor's robust thermal characteristics and small footprint make it ideal for space-constrained designs. Additionally, its lead-free and RoHS-compliant construction aligns with modern environmental standards.  

Engineers often choose the PBSS4140T for its balance of performance, size, and cost-effectiveness, making it a versatile component in consumer electronics, automotive systems, and industrial controls. Its datasheet provides detailed specifications for proper integration into circuit designs.  

Overall, the PBSS4140T exemplifies Philips' commitment to quality and innovation in semiconductor technology.

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