PBSS3515VS ,15 V low VCEsat PNP double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS3515VS ,15 V low VCEsat PNP double transistor
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PBSS3515VS
15 V low VCEsat PNP double transistor
Philips Semiconductors Product specification V low V CEsat PNP double transistor PBSS3515VS
FEATURES 300 mW total power dissipation Very small 1.6x 1.2 mm ultra thin package Self alignment during soldering due to straight leads Low collector-emitter saturation voltage High current capability Improved thermal behaviour due to flat leads Replaces two SC75/SC89 packaged low VCEsat
transistors on same PCB area Reduces required PCB area Reduced pick and place costs.
APPLICATIONS General purpose switching and muting Low frequency driver circuits LCD backlighting Audio frequency general purpose amplifier applications Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTIONPNP low VCEsat double transistor in a SOT666 plastic
package.
NPN complement: PBSS2515VS.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification V low V CEsat PNP double transistor PBSS3515VS
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes Transistor mounted on an FR4 printed-circuit board. The only recommended soldering method is reflow soldering.
Philips Semiconductors Product specification V low V CEsat PNP double transistor PBSS3515VS
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat PNP double transistor PBSS3515VS
Philips Semiconductors Product specification V low V CEsat PNP double transistor PBSS3515VS
