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PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2515E.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
Rev. 02 — 27 April 2009 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −15 V collector current - - −0.5 A
ICM peak collector current single pulse;≤ 1ms −1A
RCEsat collector-emitter
saturation resistance= −500 mA;= −50 mA
[1]- 300 500 mΩ
NXP Semiconductors PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor Pinning information Ordering information Marking Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Table 2. Pinning base emitter collector
sym013
Table 3. Ordering informationPBSS3515E SC-75 plastic surface-mounted package; 3 leads SOT416
Table 4. Marking codesPBSS3515E 1R
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −15 V
VCEO collector-emitter voltage open base - −15 V
VEBO emitter-base voltage open collector - −6V collector current - −0.5 A
ICM peak collector current single pulse;≤ 1ms −1A
IBM peak base current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 150 mW
[2]- 250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 833 K/W
[2]- - 500 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 175 K/W
NXP Semiconductors PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −15 V; IE =0A - - −100 nA
VCB= −15 V; IE =0A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−2 V; IC= −10 mA 200 - -
VCE=−2 V; IC= −100 mA [1] 150 - -
VCE=−2 V; IC= −500 mA [1] 90 - -
VCEsat collector-emitter
saturation voltage= −10 mA;= −0.5 mA −25 mV= −200 mA;= −10 mA −150 mV= −500 mA;= −50 mA
[1] -- −250 mV
RCEsat collector-emitter
saturation resistance= −500 mA;= −50 mA
[1]- 300 500 mΩ
VBEsat base-emitter
saturation voltage= −500 mA;= −50 mA
[1] -- −1.1 V
VBEon base-emitter turn-on
voltage
VCE=−2 V; IC= −100 mA [1] -- −0.9 V delay time VCC= −11V;= −250 mA;
IBon= −12.5 mA;
IBoff= 12.5 mA
-10 - ns rise time - 22 - ns
ton turn-on time - 32 - ns storage time - 125 - ns fall time - 37 - ns
toff turn-off time - 162 - ns transition frequency VCE= −5V;= −100 mA;= 100 MHz
100 280 - MHz collector capacitance VCB= −10V;IE =ie =0A;
f=1MHz
--10 pF
NXP Semiconductors PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
