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PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor
Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PZ.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 11 December 2009 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - 100 V collector current - - 5.1 A
ICM peak collector current single pulse; ≤ 1ms
--10.2 A
RCEsat collector-emitter saturation
resistance =4A; =200 mA
[1]- 4360mΩ
NXP Semiconductors PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor Pinning information Ordering information Marking
Table 2. Pinning1base collector
3emitter collector
sym016
2, 4
Table 3. Ordering informationPBSS306NZ SC-73 plastic surface-mounted package with increased heatsink; leads
SOT223
Table 4. Marking codesPBSS306NZ S306NZ
NXP Semiconductors PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 100 V
VCEO collector-emitter voltage open base - 100 V
VEBO emitter-base voltage open collector - 5 V collector current - 5.1 A
ICM peak collector current single pulse; ≤ 1ms
-10.2 A
Ptot total power dissipation Tamb≤25°C [1] -0.7 W
[2] -1.7 W
[3] -2.0 W junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 179 K/W
[2] -- 74 K/W
[3] -- 63 K/W
Rth(j-sp) thermal resistance from
junction to solder point 15 K/W
NXP Semiconductors PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor
NXP Semiconductors PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =80V; IE=0A - - 100 nA
VCB =80V; IE =0A; = 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =2V; IC =0.5A [1] 200 330 -
VCE =2V; IC =1A [1] 150 270 -
VCE =2V; IC =2A [1] 100 175 -
VCE =2V; IC =4A [1] 50 85 -
VCE =2V; IC =5A [1] 30 60 -
VCEsat collector-emitter
saturation voltage= 0.5 A; IB =50mA [1] -27 40 mV =1A; IB =50mA [1] -53 75 mV =1A; IB =10mA [1]- 100 150 mV =2A; IB =40mA [1]- 115 165 mV =4A; IB= 200 mA [1]- 170 240 mV =4A; IB= 400 mA [1]- 155 220 mV= 5.1 A; IB= 255 mA [1]- 215 300 mV
RCEsat collector-emitter
saturation resistance =4A; IB= 200 mA [1] -43 60 mΩ
VBEsat base-emitter saturation
voltage =1A; IB= 100 mA [1]- 0.81 0.9 V =4A; IB= 400 mA [1]- 0.94 1.05 V
VBEon base-emitter turn-on
voltage
VCE =2V; IC =2A [1]- 0.78 0.85 V delay time VCC= 12.5 V; IC =3A;
IBon= 0.15A;
IBoff= −0.15A
-15 - ns rise time - 315 - ns
ton turn-on time - 330 - ns storage time - 240 - ns fall time - 290 - ns
toff turn-off time - 530 - ns transition frequency VCE =10V; IC= 100 mA;
f=100MHz
-110 - MHz collector capacitance VCB =10V; IE =ie =0A;
f=1MHz
-23 40 pF
NXP Semiconductors PBSS306NZ
100 V, 5.1 A NPN low VCEsat (BISS) transistor
