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PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS303ND.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter Automotive applications
1.4 Quick reference data[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −60 V collector current [1] -- −3A
ICM peak collector current single pulse; ≤ 1ms −6A
RCEsat collector-emitter
saturation resistance= −2A; = −200 mA
[2]- 75 100 mΩ
NXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor Pinning information Ordering information Marking
Table 2. Pinning collector collector
3base
4emitter collector collector
Table 3. Ordering informationPBSS303PD SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPBSS303PD AH
NXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[5] Pulse test: tp≤10 ms; δ≤10%.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −60 V
VCEO collector-emitter voltage open base - −60 V
VEBO emitter-base voltage open collector - −5V collector current [1]- −1A
[2]- −3A
ICM peak collector current single pulse; ≤ 1ms −6A base current - −800 mA
IBM peak base current single pulse; ≤ 1ms −2A
Ptot total power dissipation Tamb≤25°C [1] -360 mW
[3] -600 mW
[4] -750 mW
[2] -1.1 W
[1][5] -2.5 W junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Pulse test: tp≤10 ms; δ≤10%.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 350 K/W
[2] -- 208 K/W
[3] -- 167 K/W
[4] -- 113 K/W
[1][5] -- 50 K/W
Rth(j-sp) thermal resistance from
junction to solder point 45 K/W
NXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistorNXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor Characteristics Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −60 V; IE =0A - - −100 nA
VCB= −60 V; IE =0A; =150°C −50 μA
ICES collector-emitter
cut-off current
VCE= −48 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current
VEB= −5V; IC =0A - - −100 nA
hFE DC current gain VCE= −2V; IC= −500 mA 180 265 -
VCE= −2V; IC= −1A [1] 160 235 -
VCE= −2V; IC= −2A [1] 130 185 -
VCE= −2V; IC= −3A [1] 95 135 -
VCE= −2V; IC= −4A [1] 60 80 -
VCE= −2V; IC= −5A [1] 35 50 -
VCE= −2V; IC= −6A [1] 20 30 -
VCEsat collector-emitter
saturation voltage= −500 mA; IB= −50 mA - −55 −70 mV= −1A; IB= −50 mA - −100 −135 mV= −2A; IB= −200 mA [1]- −150 −200 mV= −3A; IB= −150 mA [1]- −275 −365 mV= −3A; IB= −300 mA [1]- −210 −290 mV= −4A; IB= −400 mA [1]- −285 −385 mV= −5A; IB= −500 mA [1]- −375 −495 mV= −6A; IB= −600 mA [1]- −515 −675 mV
RCEsat collector-emitter
saturation resistance= −2A; IB= −200 mA [1]- 75 100 mΩ
VBEsat base-emitter
saturation voltage= −500 mA; IB= −50 mA - −0.78 −0.87 V= −1A; IB= −50 mA - −0.80 −0.89 V= −1A; IB= −100 mA [1]- −0.83 −0.92 V= −3A; IB= −150 mA [1]- −0.92 −0.99 V= −3A; IB= −300 mA [1]- −0.94 −1.02 V
VBEon base-emitter turn-on
voltage
VCE= −2V; IC= −2A - −0.80 −1.00 V
NXP Semiconductors PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor[1] Pulse test: tp≤ 300 μs; δ≤ 0.02. delay time VCC= −9.2 V; IC= −2A;
IBon= −0.1 A; IBoff =0.1A
-13 - ns rise time - 53 - ns
ton turn-on time - 66 - ns storage time - 230 - ns fall time - 76 - ns
toff turn-off time - 306 - ns transition frequency VCE= −10 V; IC= −100 mA;
f=100MHz
-110 - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz
-58 - pF
Table 7. Characteristics …continuedTamb =25 °C unless otherwise specified.
