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PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302NX.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −20 V collector current - - −5.1 A
ICM peak collector current single pulse; ≤ 1ms −10.2 A
RCEsat collector-emitter
saturation resistance= −4A; = −200 mA
[1] -32 48 mΩ
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning1emitter collector
3base
Table 3. Ordering information
PBSS302PX SC-62 plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
Table 4. Marking codesPBSS302PX *5J
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −20 V
VCEO collector-emitter voltage open base - −20 V
VEBO emitter-base voltage open collector - −5V collector current - −5.1 A
ICM peak collector current single pulse; ≤ 1ms −10.2 A
Ptot total power dissipation Tamb≤25°C [1] -0.6 W
[2] -1.65 W
[3] -2.1 W junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 208 K/W
[2] -- 76 K/W
[3] -- 60 K/W
Rth(j-sp) thermal resistance from
junction to solder point 20 K/W
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −20 V; IE =0A - - −100 nA
VCB= −20 V; IE =0A; =150°C −50 μA
IEBO emitter-base cut-off
current
VEB= −5V; IC =0A - - −100 nA
hFE DC current gain VCE= −2V; IC= −0.5A [1] 250 370 -
VCE= −2V; IC= −1A [1] 250 340 -
VCE= −2V; IC= −2A [1] 200 290 -
VCE= −2V; IC= −4A [1] 150 220 -
VCE= −2V; IC= −6A [1] 100 160 -
VCEsat collector-emitter
saturation voltage= −0.5 A; IB= −50 mA [1]- −25 −35 mV= −1A; IB= −50 mA [1]- −45 −65 mV= −1A; IB= −10 mA [1]- −70 −100 mV= −2A; IB= −40 mA [1]- −90 −130 mV= −4A; IB= −200 mA [1]- −130 −190 mV= −4A; IB= −400 mA [1]- −120 −175 mV= −4A; IB= −40 mA [1]- −200 −300 mV= −5.1 A; IB= −255 mA [1]- −160 −230 mV
RCEsat collector-emitter
saturation resistance= −4A; IB= −200 mA [1] -32 48 mΩ= −4A; IB= −40 mA [1] -50 75 mΩ
VBEsat base-emitter
saturation voltage= −1A; IB= −100 mA [1]- −0.82 −0.9 V= −4A; IB= −400 mA [1]- −0.93 −1.05 V
VBEon base-emitter turn-on
voltage
VCE= −2V; IC= −2A [1]- −0.76 −0.85 V delay time VCC= −12.5 V; IC= −3A;
IBon= −0.15 A; IBoff =0.15A
-10 - ns rise time - 55 - ns
ton turn-on time - 65 - ns storage time - 205 - ns fall time - 145 - ns
toff turn-off time - 350 - ns transition frequency VCE= −10 V; IC= −0.1A;
f=100MHz
-130 - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz 130 160 pF
NXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistorNXP Semiconductors PBSS302PX
20 V, 5.1 A PNP low VCEsat (BISS) transistor
