PBSS302NZ ,20 V, 5.8 A NPN low VCEsat (BISS) transistorApplications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power swi ..
PBSS302PD ,40 V PNP low VCEsat (BISS) transistor
PBSS302PD ,40 V PNP low VCEsat (BISS) transistorApplications■ Power management functions■ Charging circuits■ DC-to-DC conversion■ MOSFET gate drivi ..
PBSS302PD ,40 V PNP low VCEsat (BISS) transistor
PBSS302PD ,40 V PNP low VCEsat (BISS) transistor
PBSS302PX ,20 V, 5.1 A PNP low VCEsat (BISS) transistorFeatures Low collector-emitter saturation voltage VCEsat High collector current capability I and ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DL ,3.3 V parallel interface transceiver/bufferINTEGRATED CIRCUITSPDI1284P113.3V Parallel interface transceiver/bufferProduct specification 1999 S ..
PDI1394L40 ,1394 enhanced AV link layer controller
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ.
1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - 20 V collector current - - 5.8 A
ICM peak collector current single pulse; ≤ 1ms
--11.6 A
RCEsat collector-emitter
saturation resistance =4A; =200 mA
[1] -30 43 mΩ
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor Pinning information Ordering information Marking
Table 2. Pinning1base collector
3emitter collector
sym016
2, 4
Table 3. Ordering informationPBSS302NZ SC-73 plastic surface-mounted package with increased heat
sink; 4 leads
SOT223
Table 4. Marking codesPBSS302NZ S302NZ
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 20 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5 V collector current - 5.8 A
ICM peak collector current single pulse; ≤ 1ms
-11.6 A
Ptot total power dissipation Tamb≤25°C [1] -0.7 W
[2] -1.7 W
[3] -2 W junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 179 K/W
[2] -- 74 K/W
[3] -- 63 K/W
Rth(j-sp) thermal resistance from
junction to solder point 15 K/W
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =20V; IE=0A - - 100 nA
VCB =20V; IE =0A; =150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5 V; IC=0A - - 100 nA
hFE DC current gain VCE =2V; IC =0.5A [1] 300 570 -
VCE =2V; IC =1A [1] 300 550 -
VCE =2V; IC =2A [1] 250 520 -
VCE =2V; IC =4A [1] 200 450 -
VCE =2V; IC =7A [1] 200 350 -
VCEsat collector-emitter
saturation voltage =0.5 A; IB =50mA [1]- 2025mV =1 A; IB =50mA [1]- 3550mV =1 A; IB =10mA [1]- 5070mV =2 A; IB =40mA [1]- 70 100 mV =4 A; IB =200 mA [1]- 120 170 mV =4 A; IB =400 mA [1]- 115 165 mV =4 A; IB =40mA [1]- 155 240 mV =5.8 A; IB =290 mA [1]- 170 250 mV
RCEsat collector-emitter
saturation resistance =4 A; IB =200 mA [1]- 3043mΩ =4 A; IB =40mA [1]- 3860mΩ
VBEsat base-emitter
saturation voltage =1 A; IB =100 mA [1] -0.82 0.9 V =4 A; IB =400 mA [1] -0.92 1.05 V
VBEon base-emitter turn-on
voltage
VCE =2V; IC =2A [1] -0.75 0.85 V delay time VCC =12.5V; IC =3A;
IBon =0.15A;
IBoff= −0.15A
-15 - ns rise time - 40 - ns
ton turn-on time - 55 - ns storage time - 270 - ns fall time - 85 - ns
toff turn-off time - 355 - ns transition frequency VCE =10V; IC =100 mA;
f=100MHz
-140 -MHz collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 95 150 pF
NXP Semiconductors PBSS302NZ
20 V, 5.8 A NPN low VCEsat (BISS) transistor
