PBRN123ET Fast Delivery |IC PHOENIX CO.,LIMITED

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PBRN123ET
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm
Product proﬁle1.1 General description
800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistors (RET) family in small plastic packages.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 February 2007 Product data sheet
Table 1. Product overview
PBRN123EK SOT346 SC-59A TO-236
PBRN123ES[1] SOT54 SC-43A TO-92
PBRN123ET SOT23 - TO-236AB 800 mA output current capability n Low collector-emitter saturation voltage
VCEsat High current gain hFE n Reduces component count Built-in bias resistors n Reduces pick and place costs Simpliﬁes circuit design n ±10 % resistor ratio tolerance Digital application in automotive and
industrial segments Switching loads Medium current peripheral driver
Table 2. Quick reference data
VCEO collector-emitter voltage open base - - 40 V output current [1]
PBRN123EK, PBRN123ET - - 600 mA
PBRN123ES - - 800 mA
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. Pinning information
IORM repetitive peak output current
PBRN123EK, PBRN123ETtp≤1 ms;δ≤ 0.33 - - 800 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.9 1 1.1
Table 2. Quick reference data …continued
Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23; SOT346 input (base) GND (emitter) output (collector)
001aab347
006aaa145
001aab348
006aaa145
001aab447
006aaa145
006aaa144
sym007
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Ordering information
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9). Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China Limiting values
Table 4. Ordering information
PBRN123EK SC-59A plastic surface-mounted package; 3 leads SOT346
PBRN123ES[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PBRN123ET - plastic surface-mounted package; 3 leads SOT23
Table 5. Marking codes
PBRN123EK G3
PBRN123ES N123ES
PBRN123ET *7J
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +22 V
negative - −10 V output current
PBRN123EK, PBRN123ET [1]- 600 mA
[2][3]- 700 mA
PBRN123ES [1]- 800 mA
IORM repetitive peak output current
PBRN123EK, PBRN123ETtp≤1 ms;δ≤ 0.33 - 800 mA
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Ptot total power dissipation Tamb≤25°C
PBRN123EK, PBRN123ET [1]- 250 mW
[2]- 370 mW
[3]- 570 mW
PBRN123ES [1]- 700 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from junction
to ambient
in free air
PBRN123EK, PBRN123ET [1]- - 500 K/W
[2]- - 338 K/W
[3]- - 219 K/W
PBRN123ES [1]- - 179 K/W
Rth(j-sp) thermal resistance from junction
to solder point
PBRN123EK, PBRN123ET - - 105 K/W
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. Characteristics
Tamb =25 °C unless otherwise speciﬁed.
ICBO collector-base cut-off
current
VCB =30V; =0A - 100 nA
ICEO collector-emitter cut-off
current
VCE =30V; =0A - 0.5 μA
IEBO emitter-base cut-off
current
VEB =5V; =0A
--2 mA
hFE DC current gain VCE =5V; =50mA 135 -
VCE =5V;= 300 mA
[1] 280 460 -
VCE =5V;= 600 mA
[1] 350 560 -
VCE =5V;= 800 mA
[1] 340 550 -
VCEsat collector-emitter
saturation voltage=50 mA;= 2.5 mA 2535mV= 200 mA; =10mA 6085mV= 500 mA; =10mA
[1]- 160 220 mV= 600 mA; =6mA
[1]- 290 550 mV= 800 mA; =8mA
[1]- 0.63 1.15 V
VI(off) off-state input voltage VCE =5V;= 100μA
0.6 1 1.8 V
VI(on) on-state input voltage VCE= 0.3V; =20mA 1.3 2 V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.9 1 1.1 collector capacitance VCB =10V; =ie =0A;
f=1MHz -pF
NXP Semiconductors PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Partno	Mfg	Dc	Qty	Available	Descript
PBRN123ET	PHI	N/a	3000	avai	NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm