PBLS6001D Fast Delivery |IC PHOENIX CO.,LIMITED

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PBLS6001D
60 V PNP BISS loadswitch
Product proﬁle1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN
Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device
(SMD) plastic package.
1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300μs; δ≤ 0.02
PBLS6001D
60 V PNP BISS loadswitch
Rev. 02 — 7 September 2009 Product data sheet
Table 1. Quick reference data
TR1; PNP low VCEsat transistor
VCEO collector-emitter voltage open base - - −60 V collector current (DC) [1] -- −1A
RCEsat collector-emitter saturation
resistance= −1A;= −100 mA
[2]- 255 340 mΩ
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch Pinning information Ordering information Marking
Table 2. Pinning emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 65 4 23
sym036
Table 3. Ordering information
PBLS6001D SC-74 plastic surface mounted package; 6 leads SOT457
Table 4. Marking codes
PBLS6001D F1
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
TR1; PNP low VCEsat transistor
VCBO collector-base voltage open emitter - −80 V
VCEO collector-emitter voltage open base - −60 V
VEBO emitter-base voltage open collector - −5V collector current (DC) [1]- −700 mA
[2]- −880 mA
[3]- −1A
ICM peak collector current single pulse; tp≤ 1ms - −2A base current (DC) - −300 mA
IBM peak base current single pulse; tp≤ 1ms - −1A
Ptot total power dissipation Tamb≤25°C [1]- 250 mW
[2]- 350 mW
[3]- 400 mW
TR2; NPN resistor-equipped transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +12 V
negative - −10 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW
[2]- 200 mW
[3]- 200 mW
Per device
Ptot total power dissipation Tamb≤25°C [1]- 400 mW
[2]- 530 mW
[3]- 600 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 312 K/W
[2]- - 236 K/W
[3]- - 208 K/W
TR1; PNP low VCEsat transistor
Rth(j-sp) thermal resistance from
junction to solder point - 105 K/W
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise speciﬁed
TR1; PNP low VCEsat transistor
ICBO collector-base cut-off
current
VCB= −60 V; IE =0A - - −100 nA
VCB= −60 V; IE =0A;= 150°C −50 μA
ICES collector-emitter cut-off
current
VCE= −60 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−5 V; IC=−1 mA 200 350 -
VCE=−5 V; IC= −500 mA [1] 150 230 -
VCE=−5 V; IC= −1000 mA [1] 100 160 -
VCEsat collector-emitter
saturation voltage= −100 mA; IB= −1mA - −110 −175 mV= −500 mA; IB= −50 mA [1]- −135 −180 mV= −1000 mA;= −100 mA
[1]- −255 −340 mV
RCEsat collector-emitter
saturation resistance=−1 A; IB= −100 mA [1]- 255 340 mΩ
VBEsat base-emitter saturation
voltage=−1 A; IB= −50 mA [1]- −0.95 −1.1 V
VBEon base-emitter turn-on
voltage
VCE=−5 V; IC= −1A [1]- −0.82 −0.9 V
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch
[1] Pulse test: tp ≤ 300μs; δ≤ 0.02 delay time IC= −0.5A; IBon= −25 mA;
IBoff =25mA
-11 - ns rise time - 30 - ns
ton turn-on time - 41 - ns storage time - 205 - ns fall time - 55 - ns
toff turn-off time - 260 - ns transition frequency IC= −50 mA; VCE =−10V;= 100 MHz
150 185 - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz 9 15 pF
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter cut-off
current
VCE =30V; IB=0A --1 μA
VCE =30V; IB =0A;= 150°C
--50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A --2 mA
hFE DC current gain VCE =5V; IC =20mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC=1 mA - 1.2 0.5 V
VI(on) on-state input voltage VCE= 0.3 V; IC =20mA 2 1.6 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz - 2.5 pF
Table 7. Characteristics …continued
Tamb = 25 °C unless otherwise speciﬁed
NXP Semiconductors PBLS6001D
60 V PNP BISS loadswitch

Partno	Mfg	Dc	Qty	Available	Descript
PBLS6001D	NXP	N/a	18000	avai	60 V PNP BISS loadswitch