PBLS4005Y Fast Delivery |IC PHOENIX CO.,LIMITED

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PBLS4005Y
40 V PNP BISS loadswitch
Product proﬁle1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in one package.
1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
PBLS4005Y ; PBLS4005V
40 V PNP BISS loadswitch
Rev. 03 — 16 February 2009 Product data sheet
Table 1. Product overview
PBLS4005Y SOT363 SC-88
PBLS4005V SOT666 -
Table 2. Quick reference data
TR1; PNP low VCEsat transistor
VCEO collector-emitter voltage open base - - −40 V collector current - - −500 mA
RCEsat collector-emitter saturation
resistance= −500 mA;= −50 mA
[1]- 440 700 mΩ
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V
NXP Semiconductors PBLS4005Y; PBLS4005V
40 V PNP BISS loadswitch
[1] Pulse test: tp≤ 300μs;δ≤ 0.02. Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China output current - - 100 mA bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Table 2. Quick reference data …continued
Table 3. Pinning emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 001aab555 4 23
sym036
Table 4. Ordering information
PBLS4005Y SC-88 plastic surface-mounted package; 6 leads SOT363
PBLS4005V - plastic surface-mounted package; 6 leads SOT666
Table 5. Marking codes
PBLS4005Y S5*
PBLS4005V K5
NXP Semiconductors PBLS4005Y; PBLS4005V
40 V PNP BISS loadswitch Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reﬂow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
TR1; PNP low VCEsat transistor
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6V collector current - −500 mA
ICM peak collector current single pulse; tp≤ 1ms - −1A base current - −50 mA
IBM peak base current single pulse; tp≤ 1ms - −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW
TR2; NPN resistor-equipped transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +40 V
negative - −10 V output current - 100 mA
ICM peak collector current single pulse; tp≤1 ms - 100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW
Per device
Ptot total power dissipation Tamb≤25°C - 300 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
NXP Semiconductors PBLS4005Y; PBLS4005V
40 V PNP BISS loadswitch Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8. Characteristics
Tamb =25 °C unless otherwise speciﬁed.
TR1; PNP low VCEsat transistor
ICBO collector-base cut-off
current
VCB= −40 V; IE =0A - - −100 nA
VCB= −40 V; IE =0A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−2 V; IC= −10 mA 200 - -
VCE=−2 V; IC= −100 mA [1] 150 - -
VCE=−2 V; IC= −500 mA [1] 40 - -
VCEsat collector-emitter
saturation voltage= −10 mA; IB= −0.5 mA - - −50 mV= −100 mA; IB= −5mA - - −130 mV= −200 mA; IB= −10 mA - - −200 mV= −500 mA; IB= −50 mA [1] -- −350 mV
RCEsat collector-emitter
saturation resistance= −500 mA; IB= −50 mA [1]- 440 700 mΩ
VBEsat base-emitter
saturation voltage= −500 mA; IB= −50 mA [1] -- −1.2 V
VBEon base-emitter
turn-on voltage
VCE=−2 V; IC= −100 mA [1] -- −1.1 V transition frequency IC= −100 mA; VCE= −5V;= 100 MHz
100 300 - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz
--10 pF
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB=0A --1 μA
VCE =30V; IB =0A;= 150°C
--50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A --90 μA
hFE DC current gain VCE =5V; IC=5 mA 80 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC= 100μA - 1.2 0.8 V
VI(on) on-state input voltage VCE= 0.3 V; IC =5mA 3 1.6 - V bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz - 2.5 pF
NXP Semiconductors PBLS4005Y; PBLS4005V
40 V PNP BISS loadswitch
NXP Semiconductors PBLS4005Y; PBLS4005V
40 V PNP BISS loadswitch

Partno	Mfg	Dc	Qty	Available	Descript
PBLS4005Y	NXP	N/a	63000	avai	40 V PNP BISS loadswitch