PBLS4003D Fast Delivery |IC PHOENIX CO.,LIMITED

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PBLS4003D
40 V PNP BISS loadswitch
Product proﬁle1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp≤ 300μs;δ≤ 0.02.
PBLS4003D
40 V PNP BISS loadswitch
Rev. 03 — 5 January 2009 Product data sheet
Table 1. Quick reference data
TR1; PNP low VCEsat transistor
VCEO collector-emitter voltage open base - - −40 V collector current [1] -- −1A
RCEsat collector-emitter saturation
resistance= −500 mA;= −50 mA
[2]- 240 340 mΩ
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch Pinning information Ordering information Marking Limiting values
Table 2. Pinning emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 65 4 23
sym036
Table 3. Ordering information
PBLS4003D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
PBLS4003D R3
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
TR1; PNP low VCEsat transistor
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −5V collector current [1]- −0.7 A
[2]- −0.85 A
[3]- −1A
ICM peak collector current single pulse; tp≤ 1ms - −2A base current - −0.3 A
IBM peak base current single pulse; tp≤ 1ms - −1A
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Ptot total power dissipation Tamb≤25°C [1]- 250 mW
[2]- 350 mW
[3]- 400 mW
TR2; NPN resistor-equipped transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +40 V
negative - −10 V output current - 100 mA
ICM peak collector current single pulse; tp≤1ms - 100 mA
Ptot total power dissipation Tamb≤25°C - 200 mW
Per device
Ptot total power dissipation [1]- 400 mW
[2]- 530 mW
[3]- 600 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 312 K/W
[2]- - 236 K/W
[3]- - 210 K/W
Per TR1; PNP low VCEsat transistor
Rth(j-sp) thermal resistance from
junction to solder point - 105 K/W
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch Characteristics
Table 7. Characteristics
Tamb =25 °C unless otherwise speciﬁed.
TR1; PNP low VCEsat transistor
ICBO collector-base cut-off
current
VCB= −40 V; IE =0A - - −0.1 μA
VCB= −40 V; IE =0A;= 150°C −50 μA
ICES collector-emitter
cut-off current
VCE= −30 V; VBE =0V - - −0.1 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −0.1 μA
hFE DC current gain VCE=−5 V; IC=−1 mA 300 - -
VCE=−5 V; IC= −100 mA [1] 300 - 800
VCE=−5 V; IC= −500 mA [1] 215 - -
VCE=−5 V; IC= −1A [1] 150 - -
VCEsat collector-emitter
saturation voltage= −100 mA; IB= −1mA - −80 −140 mV= −500 mA; IB= −50 mA [1]- −120 −170 mV=−1 A; IB= −100 mA [1]- −220 −310 mV
RCEsat collector-emitter
saturation resistance= −500 mA; IB= −50 mA [1]- 240 340 mΩ
VBEsat base-emitter
saturation voltage=−1 A; IB= −50 mA [1] -- −1.1 V
VBEon base-emitter
turn-on voltage
VCE=−5 V; IC= −1A [1] -- −1V
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch
[1] Pulse test: tp≤ 300μs;δ≤ 0.02. transition frequency IC= −50 mA; VCE= −10V;= 100 MHz
150 - - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz - 12 pF
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 400 μA
hFE DC current gain VCE =5V; IC=5 mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC= 100μA - 1.1 0.8 V
VI(on) on-state input voltage VCE= 0.3 V; IC=10 mA 2.5 1.8 - V bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz - 2.5 pF
Table 7. Characteristics …continued
Tamb =25 °C unless otherwise speciﬁed.
NXP Semiconductors PBLS4003D
40 V PNP BISS loadswitch

Partno	Mfg	Dc	Qty	Available	Descript
PBLS4003D	PHILIPS	N/a	3000	avai	40 V PNP BISS loadswitch