PBLS2003D Fast Delivery |IC PHOENIX CO.,LIMITED

PBLS2003D ,20 V PNP BISS loadswitchApplicationsn Supply line switchesn Battery charger switchesn High-side switches for LEDs, drivers ..
PBLS2004D ,20 V PNP BISS loadswitch
PBLS2004D ,20 V PNP BISS loadswitchApplications■ Supply line switches■ Battery charger switches■ High-side switches for LEDs, drivers ..
PBLS4001D ,40 V PNP BISS loadswitchApplicationsn Supply line switchesn Battery charger switchesn High-side switches for LEDs, drivers ..
PBLS4002D ,40 V PNP BISS loadswitchApplicationsn Supply line switchesn Battery charger switchesn High-side switches for LEDs, drivers ..
PBLS4002D ,40 V PNP BISS loadswitchLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PDA54-11EWA , 13.8mm(0.54INCH) 14SEGMENT DUAL DIGIT ALPHANUMERIC NUMERICDISPLAYS
PDA54-11YWA , 13.8mm (0.543INCH) 14 SEGMENT DUAL DIGIT ALPHANUMERIC DISPLAY
PDC-20-1 ,Circuits - 6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz
PDC-20-3 ,Circuits - 6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..

PBLS2003D
20 V PNP BISS loadswitch
Product proﬁle1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
[1] Pulse test: tp≤ 300μs;δ≤ 0.02
PBLS2003D
20 V PNP BISS loadswitch
Rev. 02 — 27 August 2009 Product data sheet
Table 1. Quick reference data
TR1; PNP low VCEsat transistor
VCEO collector-emitter voltage open base - - −20 V collector current (DC) - - −1A
RCEsat collector-emitter saturation
resistance= −1A;= −100 mA
[1]- 185 280 mΩ
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch Pinning information Ordering information Marking Limiting values
Table 2. Pinning emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 65 4 23
sym036
Table 3. Ordering information
PBLS2003D SC-74 plastic surface mounted package; 6 leads SOT457
Table 4. Marking codes
PBLS2003D F8
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
TR1; PNP low VCEsat transistor
VCBO collector-base voltage open emitter - −20 V
VCEO collector-emitter voltage open base - −20 V
VEBO emitter-base voltage open collector - −5V collector current (DC) - −1A
ICM peak collector current tp≤ 300 μs- −2A base current (DC) - −0.3 A
IBM peak base current tp≤ 300 μs- −0.6 A
Ptot total power dissipation Tamb≤25°C [1]- 250 mW
[2]- 350 mW
[3]- 400 mW
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
TR2; NPN resistor-equipped transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +40 V
negative - −10 V output current - 100 mA
ICM peak collector current tp≤ 300μs - 100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW
Per device
Ptot total power dissipation [1]- 400 mW
[2]- 530 mW
[3]- 600 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 315 K/W
[2]- - 236 K/W
[3]- - 210 K/W
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch Characteristics
Table 7. Characteristics
Tamb =25 °C unless otherwise speciﬁed
TR1; PNP low VCEsat transistor
ICBO collector-base cut-off
current
VCB= −20 V; IE =0A - - −0.1 μA
VCB= −20 V; IE =0A;= 150°C −50 μA
ICES collector-emitter
cut-off current
VCE= −20 V; VBE =0V - - −0.1 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −0.1 μA
hFE DC current gain VCE=−2 V; IC=−1 mA 220 495 -
VCE=−2 V; IC= −100 mA 220 440 -
VCE=−2 V; IC= −500 mA [1] 220 310 -
VCE=−2 V; IC= −1A [1] 155 220 -
VCE=−2 V; IC= −2A [1] 60 120 -
VCEsat collector-emitter
saturation voltage= −100 mA; IB= −1mA - −55 −90 mV= −500 mA; IB= −50 mA [1]- −100 −150 mV=−1 A; IB= −50 mA [1]- −200 −300 mV=−1 A; IB= −100 mA [1]- −185 −280 mV
RCEsat collector-emitter
saturation resistance=−1 A; IB= −100 mA [1]- 185 280 mΩ
VBEsat base-emitter
saturation voltage=−1 A; IB= −50 mA [1]- −0.95 −1.1 V=−1 A; IB= −100 mA [1]- −1 −1.1 V
VBEon base-emitter
turn-on voltage
VCE=−5 V; IC= −1A [1]- −0.85 −1.1 V delay time IC=−1 A; IBon= −50 mA;
IBoff =50mA - ns rise time - 34 - ns
ton turn-on time - 42 - ns storage time - 140 - ns fall time - 45 - ns
toff turn-off time - 185 - ns transition frequency IC= −50 mA; VCE= −10V;= 100 MHz
150 185 - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz
-15 20 pF
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch
[1] Pulse test: tp≤ 300μs;δ≤ 0.02
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 400 μA
hFE DC current gain VCE =5V; IC=5 mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC= 100μA - 1.1 0.8 V
VI(on) on-state input voltage VCE= 0.3 V; IC=10 mA 2.5 1.8 - V bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz - 2.5 pF
Table 7. Characteristics …continued
Tamb =25 °C unless otherwise speciﬁed
NXP Semiconductors PBLS2003D
20 V PNP BISS loadswitch

Partno	Mfg	Dc	Qty	Available	Descript
PBLS2003D	NXP	N/a	13330	avai	20 V PNP BISS loadswitch