PBLS1504V Fast Delivery |IC PHOENIX CO.,LIMITED

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PBLS1504V
15 V PNP BISS loadswitch
Product proﬁle1.1 General description
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low ‘threshold’ voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
PBLS1504Y ; PBLS1504V
15 V PNP BISS loadswitch
Rev. 03 — 25 August 2009 Product data sheet
Table 1. Product overview
PBLS1504Y SOT363 SC-88
PBLS1504V SOT666 -
Table 2. Quick reference data
TR1; PNP; low VCEsat transistor
VCEO collector-emitter voltage open base - - −15 V collector current (DC) - - −500 mA
RCEsat equivalent on-resistance IC = −500 mA;
IB = −50 mA 300 500 mΩ
TR2; NPN; resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V
NXP Semiconductors PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China output current (DC) - - 100 mA bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Table 2. Quick reference data …continued
Table 3. Discrete pinning emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 001aab555 4 23
sym036
Table 4. Ordering information
PBLS1504Y SC-88 plastic surface mounted package; 6 leads SOT363
PBLS1504V - plastic surface mounted package; 6 leads SOT666
Table 5. Marking codes
PBLS1504Y *C4
PBLS1504V C4
NXP Semiconductors PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reﬂow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Transistor TR1: PNP
VCBO collector-base voltage open emitter - −15 V
VCEO collector-emitter voltage open base - −15 V
VEBO emitter-base voltage open collector - −6V collector current (DC) - −500 mA
ICM peak collector current tp≤1 ms;δ≤ 0.02 - −1A base current (DC) - −50 mA
IBM peak base current tp≤1 ms;δ≤ 0.02 - −100 mA
Ptot total power dissipation Tamb ≤ 25°C [1]- 200 mW
Transistor TR2: NPN
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage -
positive - +40 V
negative - −10 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ≤ 25°C [1]- 200 mW
Per device
Ptot total power dissipation Tamb ≤ 25°C - 300 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
NXP Semiconductors PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch Characteristics
[1] Pulse test: tp≤ 300μs;δ≤ 0.02
Table 8. Characteristics
Tamb = 25 °C unless otherwise speciﬁed
Transistor TR1: PNP
ICBO collector-base cut-off
current
VCB = −15 V; IE = 0 A - - −100 nA
VCB = −15 V; IE = 0 A; Tj= 150 °C- - −50 μA
ICES collector-emitter
cut-off current
VCE = −15 V; VBE = 0 V - - −100 nA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −100 nA
hFE DC current gain VCE = −2 V; IC = −10 mA 200 - -
VCE = −2 V; IC = −100 mA [1] 150 - -
VCE = −2 V; IC = −500 mA [1] 90 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA - - −25 mV
IC = −200 mA; IB = −10 mA - - −150 mV
IC = −500 mA; IB = −50 mA [1] -- −250 mV
RCEsat equivalent
on-resistance
IC = −500 mA; IB = −50 mA [1]- 300 500 mΩ
VBEsat base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA [1] -- −1.1 V
VBEon base-emitter turn-on
voltage
VCE = −2 V; IC = −100 mA [1] -- −0.9 V transition frequency VCE = −5 V; IC = −100 mA;= 100 MHz
100 280 - MHz collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--10 pF
Transistor TR2: NPN
ICBO collector-base cut-off
current
VCB = 50 V; IE = 0 A - - 100 nA
ICEO collector-emitter
cut-off current
VCE = 30 V; IB = 0 A - - 1 μA
VCE = 30 V; IB = 0 A; Tj= 150°C --50 μA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A - - 180 μA
hFE DC current gain VCE = 5 V; IC = 5 mA 60 - -
VCEsat collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE = 5 V; IC = 100μA - 1.1 0.8 V
VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 2.5 1.7 - V bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V;IE =Ie=0A;f=1 MHz - - 2.5 pF
NXP Semiconductors PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
NXP Semiconductors PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch
NXP Semiconductors PBLS1504Y; PBLS1504V
15 V PNP BISS loadswitch

Partno	Mfg	Dc	Qty	Available	Descript
PBLS1504V	NXP/PHILIPS	N/a	18560	avai	15 V PNP BISS loadswitch