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PBLS1501V
15 V PNP BISS loadswitch
Product profile1.1 General descriptionLow VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low ‘threshold’ voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count.
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment.
1.4 Quick reference data
PBLS1501Y ; PBLS1501V
15 V PNP BISS loadswitch
Table 1: Product overviewPBLS1501Y SOT363 SC-88
PBLS1501V SOT666 -
Table 2: Quick reference data
TR1; PNP: low VCEsat transistorVCEO collector-emitter voltage open base - - −15 V collector-current (DC) - - −500 mA
RCEsat equivalent on-resistance IC =−500 mA; =−50 mA 300 500 mΩ
TR2; NPN: resistor-equipped transistorVCEO collector-emitter voltage open base - - 50 V
Philips Semiconductors PBLS1501Y; PBLS1501V Pinning information Ordering information Marking[1] * = -: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China. output current (DC) - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Table 2: Quick reference data …continued
Table 3: Discrete pinning emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 001aab555 4 23
sym036
Table 4: Ordering informationPBLS1501Y SC-88 plastic surface mounted package; 6 leads SOT363
PBLS1501V - plastic surface mounted package; 6 leads SOT666
Table 5: MarkingPBLS1501Y *C1
PBLS1501V C1
Philips Semiconductors PBLS1501Y; PBLS1501V Limiting values[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Thermal characteristics[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Transistor TR1: PNPVCBO collector-base voltage open emitter - −15 V
VCEO collector-emitter voltage open base - −15 V
VEBO emitter-base voltage open collector - −6V collector current (DC) - −500 mA
ICM peak collector current tp ≤ 1 ms; δ≤ 0.02 - −1A base current (DC) - −50 mA
IBM peak base current tp ≤ 1 ms; δ≤ 0.02 - −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW
Transistor TR2: NPNVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +12 V
negative - −10 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW
Per devicePtot total power dissipation - 300 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7: Thermal characteristics
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
Philips Semiconductors PBLS1501Y; PBLS1501V Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 8: CharacteristicsTamb = 25 °C unless otherwise specified.
Transistor TR1: PNPICBO collector-base cut-off
current
VCB =−15 V; IE = 0 A - - −100 nA
VCB =−15 V; IE = 0 A; Tj = 150 °C- - −50 μA
ICES collector-emitter
cut-off current
VCE =−15 V; VBE = 0 V - - −100 nA
IEBO emitter-base cut-off
current
VEB =−5 V; IC = 0 A - - −100 nA
hFE DC current gain VCE =−2 V; IC =−10 mA 200 - -
VCE =−2 V; IC =−100 mA [1] 150 - -
VCE =−2 V; IC =−500 mA [1] 90 - -
VCEsat collector-emitter
saturation voltage =−10 mA; IB =−0.5 mA - - −25 mV =−200 mA; IB =−10 mA - - −150 mV =−500 mA; IB =−50 mA [1] -- −250 mV
RCEsat equivalent
on-resistance =−500 mA; IB =−50 mA [1]- 300 500 mΩ
VBEsat base-emitter
saturation voltage =−500 mA; IB =−50 mA [1] -- −1.1 V
VBEon base-emitter turn-on
voltage
VCE =−2 V; IC =−100 mA [1] -- −0.9 V transition frequency VCE = −5 V; IC =−100 mA;= 100 MHz
100 280 - MHz collector capacitance VCB =−10 V; IE = ie = 0 A;=1 MHz
--10 pF
Transistor TR2: NPNICBO collector-base cut-off
current
VCB = 50 V; IE = 0 A - - 100 nA
ICEO collector-emitter
cut-off current
VCE = 30 V; IB = 0 A - - 1 μA
VCE = 30 V; IB = 0 A; Tj = 150°C --50 μA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A - - 2 mA
hFE DC current gain VCE = 5 V; IC = 20 mA 30 - -
VCEsat collector-emitter
saturation voltage = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE = 5 V; IC = 1 mA - 1.2 0.5 V
VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2 1.6 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
Philips Semiconductors PBLS1501Y; PBLS1501V
Philips Semiconductors PBLS1501Y; PBLS1501V
Philips Semiconductors PBLS1501Y; PBLS1501V
