PBHV9050T ,500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistorApplicationsn Electronic ballastsn LED driver for LED chain modulen LCD backlightingn Automotive mo ..
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PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBTA45.
1.2 Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified
1.3 Applications Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor management Flyback converters Hook switch for wired telecom Switch Mode Power Supply (SMPS)
1.4 Quick reference data
PBHV9050T
500 V , 150 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 16 September 2009 Product data sheet
Table 1. Quick reference dataVCESM collector-emitter peak
voltage
VBE =0V - - −500 V
VCEO collector-emitter voltage open base - - −500 V collector current - - −0.15 A
hFE DC current gain VCE= −10V;= −50 mA 160 300
NXP Semiconductors PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning base emitter collector
sym013
Table 3. Ordering informationPBHV9050T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPBHV9050T LL*
NXP Semiconductors PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −500 V
VCEO collector-emitter voltage open base - −500 V
VCESM collector-emitter peak
voltage
VBE =0V - −500 V
VEBO emitter-base voltage open collector - −6V collector current - −0.15 A
ICM peak collector current single pulse;≤ 1ms −0.5 A
IBM peak base current single pulse;≤ 1ms −200 mA
Ptot total power dissipation Tamb≤25°C [1] 300 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 417 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--70 K/W
NXP Semiconductors PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −360V; =0A −100 nA
VCB= −360V;=0 A; Tj= 150°C −10 μA
ICES collector-emitter cut-off
current
VCE= −360V;
VBE =0V −100 nA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE= −10V= −10 mA 100 160 300= −50 mA [1] 80 160 300
VCEsat collector-emitter
saturation voltage= −20 mA;= −2mA −115 −200 mV= −50 mA;= −10 mA −95 −200 mV
VBEsat base-emitter saturation
voltage= −50 mA;= −10 mA
[1]- −0.75 −0.9 V transition frequency VCE= −10V;= −10 mA;= 100 MHz 50 - MHz collector capacitance VCB= −20V; =ie =0A;
f=1MHz -pF emitter capacitance VEB= −0.5V; =ic =0A;
f=1MHz 170 - pF delay time VCC= −20V;= −0.05A;
IBon=−5 mA;
IBoff =10mA
-75 - ns rise time - 1600 - ns
ton turn-on time - 1675 - ns storage time - 1200 - ns fall time - 550 - ns
toff turn-off time - 1750 - ns
NXP Semiconductors PBHV9050T
500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor
