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PBHV8540Z
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040Z.
1.2 Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified
1.3 Applications Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply
1.4 Quick reference data
PBHV8540Z
500 V , 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 14 January 2009 Product data sheet
Table 1. Quick reference dataVCESM collector-emitter peak
voltage
VBE=0V - - 500 V
VCEO collector-emitter voltage open base - - 400 V collector current - - 0.5 A
hFE DC current gain VCE =10V; =50mA
100 200 -
NXP Semiconductors PBHV8540Z
500 V , 0.5 A NPN high-voltage low VCEsat (BISS) transistor Pinning information Ordering information Marking
Table 2. Pinning base collector emitter collector
sym016
2, 4
Table 3. Ordering informationPBHV8540Z SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
Table 4. Marking codesPBHV8540Z V8540Z
NXP Semiconductors PBHV8540Z
500 V , 0.5 A NPN high-voltage low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 500 V
VCEO collector-emitter voltage open base - 400 V
VCESM collector-emitter peak
voltage
VBE=0V - 500 V
VEBO emitter-base voltage open collector - 6 V collector current - 0.5 A
ICM peak collector current single pulse;≤ 1ms A
IBM peak base current single pulse;≤ 1ms 200 mA
Ptot total power dissipation Tamb≤25°C [1]- 0.7 W
[2] 1.4 W junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBHV8540Z
500 V , 0.5 A NPN high-voltage low VCEsat (BISS) transistor Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 175 K/W
[2] --89 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--20 K/W
NXP Semiconductors PBHV8540Z
500 V , 0.5 A NPN high-voltage low VCEsat (BISS) transistor Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= 320 V; IE=0A - - 100 nA
VCB= 320 V; IE =0A;= 150°C
--10 μA
ICES collector-emitter cut-off
current
VCE= 320 V; IC=0A - - 100 nA
IEBO emitter-base cut-off
current
VEB =4V; IC=0A - - 100 nA
hFE DC current gain VCE =10V=50 mA 100 200 -= 100 mA 80 150 -= 300 mA [1] 10 20 -
VCEsat collector-emitter
saturation voltage= 100 mA; IB=10 mA - 100 200 mV= 100 mA; IB=20 mA - 60 90 mV= 300 mA; IB=60 mA - 135 250 mV
VBEsat base-emitter saturation
voltage= 300 mA; IB =60mA [1]- 0.91 1.1 V transition frequency VCE =10V; IC= 100 mA;= 100 MHz 30 - MHz collector capacitance VCB =20V; IE =ie =0A;
f=1MHz -pF emitter capacitance VEB= 0.5 V; IC =ic =0A;
f=1MHz 165 - pF delay time VCC =6V; IC= 0.5A;
IBon= 0.1 A; IBoff= −0.1A
-50 - ns rise time - 6200- ns
ton turn-on time - 6250- ns storage time - 800 - ns fall time - 2200- ns
toff turn-off time - 3000- ns
NXP Semiconductors PBHV8540Z
500 V , 0.5 A NPN high-voltage low VCEsat (BISS) transistor
