P40NF10L ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
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P40NF10L
N-CHANNEL 100V
1/8June 2002
STP40NF10LN-CHANNEL 100V - 0.028Ω - 40A TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
(1) Starting Tj = 25°C, ID = 20A, VDD = 40V TYPICAL RDS(on) = 0.028Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP40NF10L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STP40NF10L
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STP40NF10L
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
Output Characteristics
5/8
STP40NF10L
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs
Temperature
STP40NF10L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
