P421 ,400V 40A 2 SCR Lateral Bridge in a PACE-Pak packageFeaturesGlass passivated junctions for greater reliability40AElectrically isolated base plateAvaila ..
P425 ,1200V 40A 2 SCR Lateral Bridge in a PACE-Pak packageFeaturesGlass passivated junctions for greater reliability40AElectrically isolated base plateAvaila ..
P435 ,1200V 40A 4 SCR in a PACE-Pak packageBulletin I2776 rev. E 04/99P400 SERIESPASSIVATED ASSEMBLED CIRCUIT ELEMENTS
P4404EDG , P-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary )
P4404EDG , P-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary )
P45N02 ,45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETsFeatures Description• 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM areN-Channel power MOSFE ..
PBL403 , SILICON BRIDGE RECTIFIERS
PBL405 , SILICON BRIDGE RECTIFIERS
PBLS1501V ,PBLS1501Y; PBLS1501V; 15 V PNP BISS loadswitchApplications■ Supply line switches■ Battery charger switches■ High-side switches for LEDs, drivers ..
PBLS1502Y ,15 V PNP BISS loadswitch
PBLS1504V ,15 V PNP BISS loadswitchLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PBLS2002D ,20 V PNP BISS loadswitch
P401-P402-P403-P421-P425-P435
400V 40A 2 SCR Traverse Bridge in a PACE-Pak package
International
Tit2ilR, Rectifier
Bulletin 12776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
I: Glass passivated junctions for greater reliability
" Electrically isolated base plate
I: Available up to 1200 VRRM, VDRM
I: High dynamic characteristics
El Wide choice of circuit configurations
ll Simplified mechanical design and assembly
I! UL E78996 approved m
Description
The P400 series of Integrated Power Circuits con-
sists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters P400 Units
ID 40 A
@ TC 80 "C
IFSM @50Hz 385 A
@ 60Hz 400 A
fl @50Hz 745 A25
@ 60Hz 680 A25
Wt 7450 A2\/s
vRRM 400 to 1200 v
vINS 2500 v
T J - 40 to 125 ''C
1
P400 Series
International
Bulletin I2776 rev. E 04/99 TOR Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM maximum repetitive 1/Rsy.maximym non- VPRM maximum |RRM max.
Type number peak reverse voltage repetitive peak reverse repetitive peak off-state @ T J max.
voltage voltage
V V V mA
P401, P421, P431 400 500 400 10
P402, P422, P432 600 700 600
P403, P423, P433 800 900 800
P404, P424, P434 1000 1100 1000
P405, P425, P435 1200 1300 1200
On-state Conduction
Parameter P400 Units Conditions
|D Maximum DC output current 40 A @ TC = 80°C, full bridge circuits
ITSM Max. peak one-cycle 385 A t= 10ms No voltage
IFSM non-repetitive on-state 400 t=8.3ms reapplied
or forward current 325 t= 10ms 100% VRRM
340 t= 8.3ms reapplied Sinusoidal half wave,
fl Maximum Pt for fusing 745 A25 t= 10ms No voltage Initial T, = T., max.
680 t= 8.3ms reapplied
530 t=10ms 100% VRRM
480 t= 8.3ms reapplied
I2(t Maximum Wt for fusing 7450 AZVs t= 0.1 to 10ms, no voltage reapplied
I2t for time tx = I2(t V (tx
Vmon Low value of threshold voltage 0.83 V (16.7% x nx IT(AV) < I < nx |T(Av))’ T, = T, max.
Vmo)2 High value of threshold voltage 1.03 (l > nx |T(AV))' T/-- T, max.
rt1 Low level value of on-state
slope resistance 9.61 (16.7 A x n x |T(AV> < I < It X |T
rt2 High level value of on-state
7.01 (l>rrxl ),T =T max.
slope resistance T(AV) J J
VTM Max. peak on-state or 1 4 V T: = 25''C, Irs, = nx |T(AV)
VFM fowvard voltage drop . T, = 25°C, ITM = xx IHAV)
di/dt Maximum non repetitive rate of T J = 125°C from 0.67 VDRM
. 200 A/
rise of turned on current us ITS, = IT x lmv), I9 = 500mA, tr < 0.5ps, tp > Bus
Ir., Maximum holding current 130 mA T, = 25°C anode supply = 6V, resistive load
IL Maximum latching current 250 mA T J = 25''C anode supply = 6V, resistive load
