P0102AL 5AA4 ,Sensitive gate SCRsElectrical characteristics P010xxA and P010xxNSymbol Test conditions Value UnitI Max. 200 µAGTV = 1 ..
P0102AL5AA4 ,Sensitive gate SCRsapplications GAwhere available gate current is limited, such as Kground fault circuit interrupters, ..
P0102AL5AA4 ,Sensitive gate SCRsFeatures• On-state rms current, 0.8 A• Repetitive peak off-state voltage up to 600 V• Triggering ga ..
P0102BL5AA4 ,0.25A SCRsapplications SOT-23where the available gate current is limited such asstand-by mode power supplies, ..
P0102BL-5AA4 ,0.25A SCRsapplications SOT-23where the available gate current is limited such asstand-by mode power supplies, ..
P0102DA ,0.8A SCRSapplicationsTO-92 SOT-223where available gate current is limited, such as(P01xxA) (P01xxN)ground fa ..
PA847C04 , Schottky barrier diode
PA886C02 ,SCHOTTKY BARRIER DIODEApplications
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Titd:yNItt36f8-ft
M9H?v'-stit i Outline Drawings
I 5.0.7
-2 ..
PA886C02R , Schottky Barrier Diode
PA905C4 ,Low loss super high speed rectifierPA905C4 (20A) ( 400V / 20A ) Outline drawings, mmLOW LOSS ..
PA905C4 ,Low loss super high speed rectifierFeaturesJEDEC Low VF EIAJ SC-65 Super high speed switching ..
PA905C6 ,Low loss super high speed rectifierPA905C6 (20A) ( 600V / 20A ) Outline drawings, mmLOW LOSS ..
P0102AL 5AA4-P0102AL5AA4
Sensitive gate SCRs
April 2014 DocID15197 Rev 2 1/12
P010XXSensitive standard SCRs up to 0.8 A
Datasheet − production data
Features On-state rms current, 0.8 A Repetitive peak off-state voltage up to 600 V Triggering gate current from 5 to 200 µA ECOPACK® 2 compliant component
DescriptionThanks to highly sensitive triggering levels, the
P010XX SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interrupters, pilot circuits in
solid state relays, stand-by mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface mount
packages, the voltage capability of this series has
been upgraded since its introduction and is now
available up to 600 V.
Table 1. Device summary
Characteristics P010xx2/12 DocID15197 Rev 2
1 Characteristics
Table 2. Absolute ratings (limiting values) P010xxA and P010xxN
Symbol Parameter Value Unit T(RMS) On-state rms current (180° conduction angle) TO-92 Tl = 55 °C 0.8 ASOT-223 Tamb = 70 °C (AV) Average on-state current (180° conduction angle) TO-92 Tl = 55 °C 0.5 ASOT-223 Tamb = 70 °C TSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 8 Atp = 10 ms 7² tI² t value for fusing tp = 10 ms Tj = 25 °C 0.24 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 1 A
PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W
Tstg
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
Table 3. Absolute ratings (limiting values) P010xxL
Symbol Parameter Value UnitIT(RMS) On-state rms current (180° conduction angle) Tamb = 36 °C 0.25 A
IT(AV) Average on-state current (180° conduction angle) Tamb = 36 °C 0.16 A TSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 7 Atp = 10 ms 6² tI² t value for fusing tp = 10 ms Tj = 25 °C 0.18 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 0.5 A
PG(AV) Average gate power dissipation Tj = 125 °C 0.02 W
Tstg
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
DocID15197 Rev 2 3/12
P010xx Characteristics
Table 4. Electrical characteristics(1) P010xxA and P010xxN
Symbol Test conditions Value UnitIGT VD = 12 V, RL = 140 Ω Max. 200 µA
VGT Max. 0.8 V
VGD VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ Tj = 125 °C Min. 0.1 V
VRG IRG = 10 µA Min. 8 V IT = 50 mA, RGK = 1 kΩ Max. 5 mA IG = 1 mA, RGK = 1 kΩ Max. 6 mA
dV/dt VD = 67% VDRM, RGK = 1 kΩ Tj = 125 °C Min. 75 V/µs
VTM ITM = 1.6 A, tp = 380 µs Tj = 25 °C Max. 1.95 V
Vt0 Threshold voltage Tj = 125 °C Max. 0.95 V Dynamic resistance Tj = 125 °C Max. 600 mΩ DRM RRM
VDRM = VRRM = 400 V RGK = 1 kΩ Tj = 25 °C Max.VDRM = VRRM = 600 V RGK = 1 kΩ 10
VDRM = VRRM RGK = 1 kΩ Tj = 125 °C 100 Tj = 25 °C, unless otherwise specified
Table 5. Electrical characteristics(1) P010xxLTj = 25 °C, unless otherwise specified
Characteristics P010xx4/12 DocID15197 Rev 2
Table 6. Electrical device summary
Table 7. Thermal resistanceRth(j-a) Junction to case (DC) TO-92 80 °C/W
Rth(j-t) Junction to tab (DC) SOT-223 30 °C/W th(j-a) Junction to ambient (DC) TO-92 150 °C/WS(1) = 5 cm2 SOT-223 60 th(j-a) Junction to ambient (mounted on FR4 with recommended pad
layout) SOT23-3L 400 °C/W S = Copper surface under tab.
DocID15197 Rev 2 5/12
P010xx Characteristics Characteristics P010xx DocID15197 Rev 2
