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OR8GU41DIODES N/a3000avaiDIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)


OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
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OR8GU41
DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
TOSHIBA OR8GU41
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
URBGUIM
HIGH SPEED RECTIFIER APPLICATIONS Unit in mm
(FAST RECOVERY)
0 Average Forward Current : IF(AV)=0.8A(Ta=4O°C) (ir)- Cis,.'
0 Repetitive Peak Reverse Voltage : VRRM=200--400V ordi-T'
0 Reverse Recovery Time : trr=100ns(Max0 E
0 Plastic Mold Type. g"
MAXIMUM RATINGS CATHODE MARK :+,z,l ,
CHARACTERISTIC SYMBOL RATING UNIT
$0.75 g
Repetitive Peak Reverse Voltage VRRM 400 V orl i?:.
Average Forward Current IF (AV) 0 8 A N
(Ta=40°C) l. ANODE
Peak One Cycle Surge Forward I 30 (50Hz) A 2. CATHODE
Current (Non-Repetitive) FSM 33 (60Hz) J EDEC DO-41
Junction Temperature Tj -40-150 T EIAJ -
Storage Temperature Range Tstg -40-150 T TOSHIBA 3-3C1A
Weight : 0.3g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. MAX. UNIT
Peak Forward Voltage VFM IFM=1.0A - 1.5 V
Repetitive Peak Reverse -
Curren t IRRM VRRM - 400V - 50 PA
Reverse Recovery Time trr IF=1.0A, di/ dt= -30A/ ps - 100 ns
Forward Recovery Time tfr IF=1.0A - 200 ns
Thermal Resistance Rth (j-a) Junction to Ambient - 115 °C/ W
Thermal Resistance Rth(i-t) Junction to Lead - 45 °C/ W
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1996-12-02 1/2
TOSHIBA
INSTANTANEOUS FORWARD CURRENT
1F (A)
MAXIMUM ALLOWABLE TEMPERATURE
Ta MAX.
TRANSIENT THERMAL IMPEDANCE
1"i;h(j-a) (°C/W)
is- UF
Tj = 150°C
0.4 0.8 1.2 1.6 2.0 2.4 2.8
INSTANTANEOUS FORWARD VOLTAGE Up (V)
Ta MAX. - 1F(AV)
N, 10mm 10mm
120 \ I
"N _l 5mmX5mm
N, 15mm
80 , RECTANGULAR
N, WAVEFORM
40 o'' 180'' 360°
0 0.4 0.8 1.2 1.6 2.0
AVERGE FORWARD CURRENT IF(AV) (A)
rth (i-a) - t
0.001 0.01 0.1 1 10 100 1000
TIME t (s)
AVERAGE FORWARD POWER DISSIPATION
PF (AV) (W)
PEAK SURGE FORWARD CURRENT
OR8GU41
PF (AV) - IF (AV)
REC TANGULAR
WAVEFORM
0.4 0.8 1.2 1.6 2.0
AVERGE FORWARD CURRENT IF(AV) (A)
SURGE FORWAED CURRENT
Tj=25°C
f-- 50Hz
3 5 10 30 50 100
NUMBER OF CYCLES AT 50Hz
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
O The information contained herein is subject to change without notice.
arties which may result from its use. No license is granted
RPORATION or others.
1996-12-02 2/2

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