OPA121KU ,Low Cost Precision Difet® Operational AmplifierFEATURESAPPLICATIONSl LOW NOISE: 6nV/√Hz typ at 10kHzl OPTOELECTRONICSl LOW BIAS CURRENT: 5pA maxl ..
OPA124 ,Low Noise Precision Difet OPERATIONAL AMPLIFIEROPA124®OPA124®Low Noise Precision Difet OPERATIONAL AMPLIFIER
OPA124P ,Low Noise Precision Difet® Operational AmplifierOPA124®OPA124®Low Noise Precision Difet OPERATIONAL AMPLIFIER
OPA124PB ,Low Noise Precision Difet® Operational AmplifierOPA124®OPA124®Low Noise Precision Difet OPERATIONAL AMPLIFIER
OPA124U ,Low Noise Precision Difet® Operational AmplifierFEATURES APPLICATIONSl LOW NOISE: 6nV/√Hz (10kHz) l PRECISION PHOTODIODE PREAMPl LOW BIAS CURRENT: ..
OPA124UA ,Low Noise Precision Difet® Operational AmplifierFEATURES APPLICATIONSl LOW NOISE: 6nV/√Hz (10kHz) l PRECISION PHOTODIODE PREAMPl LOW BIAS CURRENT: ..
P500-17SCL , Low Phase Noise VCXO (17MHz to 36MHz)
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P500-17SCL , Low Phase Noise VCXO (17MHz to 36MHz)
P500-G120-WH , TBU® P500-G and P850-G Protectors
P500-G200-WH , TBU® P500-G and P850-G Protectors
P502-02SCL , Low Phase Noise VCXO (24MHz to 50MHz)
OPA121KM-OPA121KP-OPA121KU
Low Cost Precision Difet Operational Amplifier
® OPA121 ® Low Cost Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS l LOW NOISE: 6nV/√Hz typ at 10kHzl OPTOELECTRONICS l LOW BIAS CURRENT: 5pA maxl DATA ACQUISITION l LOW OFFSET: 2mV maxl TEST EQUIPMENT l LOW DRIFT: 3μV/°C typl MEDICAL EQUIPMENT l HIGH OPEN-LOOP GAIN: 110dB minl RADIATION HARD EQUIPMENT l HIGH COMMON-MODE REJECTION: 86dB min Case (TO-99) and Substrate DESCRIPTION 8 7 The OPA121 is a precision monolithic dielectrically- ® +V CC isolated FET (Difet ) operational amplifier. Out- standing performance characteristics are now available for low-cost applications. –In Noise, bias current, voltage offset, drift, open-loop 2 gain, common-mode rejection, and power supply ® rejection are superior to BIFET amplifiers. 3 Noise-Free +In Very low bias current is obtained by dielectric Cascode* 6 isolation with on-chip guarding. Output Laser-trimming of thin-film resistors gives very low offset and drift. Extremely low noise is achieved with 2kΩ 2kΩ Trim 10kΩ new circuit design techniques (patented). A new 1 cascode design allows high precision input specifica- 5 tions and reduced susceptibility to flicker noise. 10kΩ Trim 2kΩ 2kΩ Standard 741 pin configuration allows upgrading of 4 existing designs to higher performance levels. –V *Patented CC OPA121 Simplified Circuit ® Difet , Burr-Brown Corp. ® BIFET , National Semiconductor Corp. International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 © 1984 Burr-Brown Corporation PDS-539F Printed in U.S.A. September, 1993 SBOS139
